Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35.2 A","Channel Type":"P-CHANNEL","FET ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"SIPMOS\u00ae","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"SPD08P06P G","Rds On (Max) @ Id, Vgs":"300 mOhm @ 10A, 6.2V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"42W","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"420pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current - Continu...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35.2 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE S...