Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"434 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tra...

{"C(iss) Max. (F)":"400p","Absolute Max. Power Diss. (W)":"2.0","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"30","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-262AA","Military":"N","td(on) Max (s) On time delay":"10n","I(DSS) Max. (A)":"100u","t(r) Max. (s) Rise time":"40n...

{"C(iss) Max. (F)":"400p","Absolute Max. Power Diss. (W)":"2.0","@Pulse Width (s) (Condition)":"10u","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"40n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"30","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","Package":"TO-263AB","Military":"N","td(on) Max (s) On time delay":"10n","I(DSS) Max. (A)":"100u","t(r) Max. (s) Rise time":"40n...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"1.25(W)","Operating Temp Range":"-55C to 150C","Package Type":"THIN-TYPE MINI-MOLD","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"USM, SC-75, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1000 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...

{"Polarity":"N","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.1 A","Mounting":"Surface Mount","Drain-Source On-Volt":"30 V","Drain-Source On-Res":"5 ohm","Packaging":"Tape and Reel","Power Dissipation":"0.2 W","Rad Hardened":"No","Package Type":"SC-75","Operating Temp Range":"-55C to 150C","Type":"Small Signal","Pin Count":"3","Number of Elements":"1","Manufacturer":"RENESAS TE...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd30 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8 A","Mounting":"Through Hole","Drain-Source On-Volt":"200 V","Power Dissipation":"2 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"C(iss) Max. (F)":"440p","Absolute Max. Power Diss. (W)":"40","g(fs) Max, (S) Trans. conduct,":"1.0","r(DS)on Max. (Ohms)":"2.5","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"16n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"0.6","I(D) Abs. Drain Current (A)":"3.0"}...