Product Datasheet Search Results:
2 Pages, 34 KB, Original- SD213DE
- Calogic, Llc
- 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
1 Pages, 210 KB, Original- SD213DE-LF
- Calogic
- SD213DE-LF
3 Pages, 338 KB, Original- SD213DE
- Linear Integrated Systems, Inc.
- 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
2 Pages, 21 KB, Original- SD213DE
- Sipex Corporation
- High-Speed Analo N-Channel DMOS FET
3 Pages, 113 KB, Scan- SD213DE
- Topaz Semiconductor
- ±5 V, N-channel enhancement-mode D-MOS FET switch
6 Pages, 62 KB, Original- SD213DE
- Temic Semiconductors
- N-Channel Lateral DMOS FETs
1 Pages, 186 KB, Scan- SD213DE
- Vishay Siliconix
- Shortform Siliconix Datasheet
6 Pages, 52 KB, Original- SD213DE-2
- Vishay Presicion Group
- 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
Product Details Search Results:
Calogic.net/SD213DE
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"10 V","Transistor Applic...
1466 Bytes - 08:24:37, 16 January 2025
Calogic.net/SD213DE-LF
747 Bytes - 08:24:37, 16 January 2025
Linearsystems.com/SD213DE
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1548 Bytes - 08:24:37, 16 January 2025
Various/SD213DE/R
{"@V(DS) (V) (Test Condition)":"10","Absolute Max. Power Diss. (W)":"300m","Package":"TO-72","g(fs) Max, (S) Trans. conduct,":"12m","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"10m","I(D) Abs. Drain Current (A)":"50m","r(DS)on Max. (Ohms)":"70"}...
726 Bytes - 08:24:37, 16 January 2025
Vishay.com/SD213DE-2
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"10 V","Transistor Application"...
1478 Bytes - 08:24:37, 16 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SD2131.pdf | 0.15 | 1 | Request |
