ABSOLUTE M AXIM UM R A T INGS
Drain Cur re nt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipat ion at 25oC Case Tem pera ture . . . 1.2W
Stor age Temperatue Range . . . . . . . . . . . . . -65oC t o +200 oC
Lea d Tempera ture ( 1/16" fr om case for 10 sec.). . . . . . 300oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +125oC
SD211 / SD213 / SD215
CORPORATION
DC CHARACTERISTIC S (TA = 25 oC, unless other wise specified )
SYMBOL PARAMETER SD211 SD213 SD215 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BVDS Drain-to-Source 30 35
V
VGS = VBS = 0V, ID = 10µA
10 25 10 25 20 25 VGS = VBS = -5V, IS = 10nA
BVSD Sourc e-to Drain 10 10 20 VGD = VBD = -5V, ID = 10nA
BVDB Drain-to-Body 15 15 25 VGB = 0V, sourc e OPEN, ID = 10nA
BVSB Source-to-Body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA
LEAKAGE CURRENT
IDS (OFF) Drain-to-Source 110 110
nA
VGS = VBS = -5V, VDS = +10V
110 VGS = VBS = -5V, VDS = +20V
ISD (OFF) Source-to-Drain 110 110 V
GS = VBD = -5V, VSD = +10V
110 VGS = VBD = -5V, VSD = +20V
IGBS Gate 10 10 10 VDB = VSB = 0V, VGS = ±40V
VTThresho ld Vol tag e 0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS = VT, IS = 1µA, VSB = 0V
rDS (ON) Drain-to-Source
Resistance
50 70 50 70 50 70
Ω
ID = 1.0mA, VSB = 0, VGS = +5V
30 45 30 45 30 45 ID = 1.0mA, VSB = 0, VGS = +10V
23 23 23 ID = 1.0mA, VSB = 0, VGS = +15V
19 19 19 ID = 1.0mA, VSB = 0, VGS = +20V
17 ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICA L CHARACT ERISTICS
SYMBOL PARAMETER SD211 SD213 SD215 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs Forward
Transconductance 10 15 10 15 10 15 ms VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
CISS Gate Node 2.4 3.5 2.4 3.5 2.4 3.5 pF VDS = 10V, f = 1 MHz
VGS = VBS = -15V
COSS Drain Node 1.3 1.5 1.3 1.5 1.3 1.5
CRSS Source Node 0.3 0.5 0.3 0.5 0.3 0.5
Inf orm at i on furni shed by Calogic is believed to be accurate and reli able. Howe ver, n o responsibi lit y is a ssumed for its use: no r for any in fring eme nt of pate nts or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CAL O G IC CORPO R ATION, 237 Whitney Place, Fremont, California 94539, Telephone: 51 0-656-2900, FAX : 510-651-3025
PARAMETER SD211 SD212 SD215 UNIT
VDS Drain-to-Source +30 +10 +20 Vdc
VSD Source-to-Drain +10 +10 +20 Vdc
VDB Drain-to-Body +30 +15 +25 Vdc
VSB Source-to-Body +15 +15 +25 Vdc
VGS Gate-to-Source -15
+25 -15
+25 -25
+30 Vdc
VGB Gate-to-Body -0.3
+25 -0.3
+25 -0.3
+30 Vdc
VGD Gate-to-Drain -30
+25 -15
+25 -25
+30 Vdc