Product Datasheet Search Results:

SD1143-01.pdf3 Pages, 106 KB, Original
SD1143-01
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
80-SD1143-01.pdf3 Pages, 97 KB, Original
80-SD1143-01
Microchip Technology
Trans RF BJT NPN 18V 2A 20000mW 4-Pin Case M-113
80-SD1143-01.pdf3 Pages, 97 KB, Original
80-SD1143-01
Microsemi
Trans RF BJT NPN 18V 2A 20000mW 4-Pin Case M-113
SD1143-01.pdf3 Pages, 97 KB, Original
SD1143-01
Microsemi Corp.
VHF BAND, Si, NPN, RF POWER TRANSISTOR
SD1143-01.pdf1 Pages, 241 KB, Scan
SD1143-01
Stmicroelectronics
RF & Microwave Components Data Book 1993

Product Details Search Results:

Advancedsemiconductor.com/SD1143-01
{"Continuous Collector Current":"2 A","Emitter- Base Voltage VEBO":"4 V","Product Category":"RF Bipolar Transistors","Transistor Polarity":"NPN","Maximum Operating Temperature":"+ 150 C","DC Collector/Base Gain hfe Min":"5","Pd - Power Dissipation":"20 W","Packaging":"Tray","Collector- Emitter Voltage VCEO Max":"18 V","Mounting Style":"Screw","Frequency":"175 MHz","Minimum Operating Temperature":"- 65 C","Package / Case":"M113","Transistor Type":"Bipolar Power","Configuration":"Single Dual Emitter","Technol...
1611 Bytes - 11:33:35, 03 December 2024
Microchip.com/80-SD1143-01
1059 Bytes - 11:33:35, 03 December 2024
Microsemi.com/80-SD1143-01
{"Collector Current (DC) ":"2(A)","Power Gain":"10(MIN)(dB)","Emitter-Base Voltage":"4(V)","Power Dissipation":"20(W)","Operating Temp Range":"-65C to 200C","Package Type":"Case M-113","Collector-Base Voltage":"36(V)","DC Current Gain":"5@250MA@5V","Output Power":"10(W)","Configuration":"Single Dual Emitter","Type":"NPN","Number of Elements":"1"}...
1368 Bytes - 11:33:35, 03 December 2024
Microsemi.com/SD1143-01
{"Status":"ACTIVE","Collector-base Capacitance-Max":"45 pF","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"0.380 INCH, PLASTIC, M113, 4 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Collector Current-Max (IC)":"2 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"RADIAL","Transistor Polarity":"NPN","Package Shape":"ROUND...
1291 Bytes - 11:33:35, 03 December 2024

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