12-05-2002
SD1143-01
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor
designed primarily for Class C, VHF communications
equipment. Emitter ballast resistors provide high VSWR
operating capability.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
VCBO Collector-Base Voltage 36 V
VCER Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 2.0 A
PDISS Power Dissipation 20 W
TJ Junction Temperature +200 °
°°
°C
TSTG Storage Temperature -65 to +150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance* 8.75 °
°°
°C/W
Features
FeaturesFeatures
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 10 W
• GP = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
12-05-2002
SD1143-01
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCES I
C = 50mA VBE = 0V 36 --- --- V
BVCEO I
E = 15mA IB = 0mA 18 --- --- V
BVEBO I
E = 2.5mA IC = 0mA 4.0 --- --- V
ICES V
CE = 15 V IE = 0mA ------ --- 2 mA
hFE V
CE = 5 V IC = 250mA 5 --- 200 ---
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f = 175 MHz PIN = 1 W VCC = 12.5V 10 --- --- W
GP f = 175 MHz PIN = 1 W VCC = 12.5V 10 --- --- dB
COB f = 1 MHz VCB = 15V --- --- 45 pf
12-05-2002
SD1143-01
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
