Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ULTRA SMALL, VESM, 2-1L1A, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configu...

{"Emitter- Base Voltage VEBO":"10 V","Collector-Emitter Saturation Voltage":"100 mV","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Technology":"Si","DC Collector/Base Gain hfe Min":"70 at 10 mA at 5 V","Maximum DC Collector Current":"100 mA","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Collector- Base Voltage VCBO":"50 V","Minimum Operating Temperature":"- 55 C","Pd - Power Dissipation":"150 mW","Package / Case":"SOT-723-3","Config...

{"Continuous Collector Current":"100 mA","Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"70","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Pd - Power Dissipation":"150 mW","Typical Resistor Ratio":"1","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"VESM","Package / Case":"SOT-723","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 10mA, 5V","Frequency - Transition":"-","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN1101MFV-06MFV -","Resistor - Emitter Base (R2) (Ohms)":"22k","Standard Package":"1","Transistor Type":"NPN - Pre-Biased","Family":"Transistors (BJT) - Single, Pre-Biased","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500\u00b5...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"-","Transistor Type":"NPN - Pre-Biased","Product Photos":"VESM","Family":"Transistors (BJT) - Single, Pre-Biased","Resistor - Base (R1) (Ohms)":"22k","Current - Collector Cutoff (Max)":"500nA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500\u00b5A, 5mA","Voltage - Collector Emitter Breakdown (Max)":"50V","Power - Max":"150mW","Packaging":"Tape & Reel (TR)","Datasheets":"RN110xMFV -","Re...