RN1101MFV∼RN1106MFV
2010-03-07 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
z Ultra-small package, suited to very high density mounting
z Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
z A wide range of resistor values is available for use in various circuits.
z Complementary to the RN2101MFV to RN2106MFV
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage
RN1101MFV to 1106MFV
VCEO 50 V
RN1101MFV to 1104MFV 10
Emitter-base voltage RN1105MFV, 1106MFV VEBO 5 V
Collector current IC 100 mA
Collector power dissipation PC(Note 1) 150 mW
Junction temperature Tj 150 °C
Storage temperature range
RN1101MFV to 1106MFV
Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
JEDEC ―
JEITA ―
TOSHIBA 2-1L1A
Weight: 1.5 mg (typ.)
Unit: mm
Type No. R1 (kΩ) R2 (kΩ)
RN1101MFV 4.7 4.7
RN1102MFV 10 10
RN1103MFV 22 22
RN1104MFV 47 47
RN1105MFV 2.2 47
RN1106MFV 4.7 47
1
2
3
0.80 ± 0.05
0.32 ± 0.05
0.22 ± 0.05
0.8 ± 0.05
0.4
1.2 ± 0.05
1.2 ± 0.05
0.13 ± 0.05
0.5 ± 0.05
1
0.4
VESM
1. BASE
2. EMITTER
3. COLLECTOR
0.5
0.45
0.4
0.4
1.15
0.45
0.4
Pad Dimension
（
Reference
）
unit：mm
RN1101MFV∼RN1106MFV
2010-03-07 2
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
ICBO VCB = 50 V, IE = 0 ― ― 100
Collector cutoff current RN1101MFV to
1106MFV ICEO
―
VCE = 50 V, IB = 0 ― ― 500
nA
RN1101MFV 0.82 ― 1.52
RN1102MFV 0.38 ― 0.71
RN1103MFV 0.17 ― 0.33
RN1104MFV
VEB = 10 V, IC = 0
0.082 ― 0.15
RN1105MFV 0.078 ― 0.145
Emitter cutoff current
RN1106MFV
IEBO ―
VEB = 5 V, IC = 0
0.074 ― 0.138
mA
RN1101MFV 30 ― ―
RN1102MFV 50 ― ―
RN1103MFV 70 ― ―
RN1104MFV 80 ― ―
RN1105MFV 80 ― ―
DC current gain
RN1106MFV
hFE ― V
CE = 5 V, IC = 10 mA
80 ― ―
Collector-emitter
saturation voltage
RN1101MFV to
1106MFV VCE (sat) ― I
C = 5 mA, IB = 0.5 mA ― 0.1 0.3 V
RN1101MFV 1.1 ― 2.0
RN1102MFV 1.2 ― 2.4
RN1103MFV 1.3 ― 3.0
RN1104MFV 1.5 ― 5.0
RN1105MFV 0.6 ― 1.1
Input voltage (ON)
RN1106MFV
VI (ON) ― VCE = 0.2 V, IC = 5
mA
0.7 ― 1.3
V
RN1101MFV to
1104MFV 1.0 ― 1.5
Input voltage (OFF)
RN1105MFV,
1106MFV
VI (OFF) ― VCE = 5 V, IC = 0.1
mA
0.5 ― 0.8
V
Collector output
capacitance
RN1101MFV to
1106MFV Cob ― VCB = 10 V, IE = 0,
f = 1 MHz ― 0.7 ― pF
RN1101MFV 3.29 4.7 6.11
RN1102MFV 7 10 13
RN1103MFV 15.4 22 28.6
RN1104MFV 32.9 47 61.1
RN1105MFV 1.54 2.2 2.86
Input resistor
RN1106MFV
R1 ― ―
3.29 4.7 6.11
kΩ
RN1101MFV to
1104MFV 0.8 1.0 1.2
RN1105MFV 0.0376 0.0468 0.0562
Resistor ratio
RN1106MFV
R1/R2 ― ―
0.08 0.1 0.12
RN1101MFV∼RN1106MFV
2010-03-07 3
RN1103MFV RN1104MFV
RN1105MFV RN1106MFV
RN1102MFV
RN1101MFV
COLLECTOR CURRENT IC (mA)
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = 0.2V
RN1101MFV∼RN1106MFV
2010-03-07 4
RN1101MF
V
RN1102MFV
RN1103MFV RN1104MF
V
RN1105MFV
RN1106MF
V
RN1101MFV∼RN1106MFV
2010-03-07 5
RN1101MF
V
RN1102MF
V
RN1103MF
V
RN1104MF
V
RN1105MF
V
RN1106MF
V
RN1101MFV∼RN1106MFV
2010-03-07 6
RN1101MF
V
RN1102MF
V
RN1103MF
V
RN1104MF
V
RN1105MF
V
RN1106MF
V
RN1101MFV∼RN1106MFV
2010-03-07 7
Type Name Marking
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
XA
XB
XC
XD
XE
XF
RN1101MFV∼RN1106MFV
2010-03-07 8
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