Product Datasheet Search Results:
13 Pages, 547 KB, Original- PTFB082817FHV1
- Infineon Technologies Ag
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
13 Pages, 547 KB, Original- PTFB082817FHV1R250
- Infineon Technologies Ag
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Infineon.com/PTFB082817FHV1
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package ...
1476 Bytes - 19:22:44, 07 October 2024
Infineon.com/PTFB082817FHV1R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package ...
1500 Bytes - 19:22:44, 07 October 2024
