All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
34 36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
IMD, ACPR (dBc)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, PAR = 8:1 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Efficiency
IMD Up
IMD Low
ACPR
RF Characteristics
Two-carrier WCDMA Specications (tested in Inneon test xture)
VDD = 28 V, IDQ = 2.15 A, POUT = 60 W average, ƒ = 821 MHz, 3GPP signal, 10 MHz spacing, channel bandwidth = 3.84 MHz,
peak/average = 8 : 1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 18.5 19.3 — dB
Drain Efciency hD 28 29 — %
Intermodulation Distortion IMD — –36 –34 dBc
Thermally-Enhanced High Power RF LDMOS FET
280 W, 30 V, 791 – 821 MHz
Description
The PTFB082817FH is a LDMOS FET intended for use in multi-
standard cellular power amplier applications. Features include
input and output matching, high gain and thermally-enhanced
package with earless anges. Manufactured with Inneon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFB082817FH
Package H-34288-4/2
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical single-carrier WCDMA performance at
821 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 19 dB
- Efciency = 35 %
- Adjacent channel power = –35 dBc
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
ampliers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 280 W
(CW) output power
• Pb-Free and RoHS compliant
Data Sheet 2 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 28 V, IDQ = 2.15 A VGS 2.5 3.9 4.5 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 250 W CW) RqJC 0.215 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB082817FH V1 H-34288-4/2 Ceramic open-cavity, earless ange Tray
PTFB082817FH V1 R250 H-34288-4/2 Ceramic open-cavity, earless ange Tape & Reel
PTFB082817FH
Confidential, Limited Internal Distribution
Data Sheet 3 of 13 Rev. 02, 2010-12-13
0
5
10
15
20
25
30
35
40
16
17
18
19
20
34 36 38 40 42 44 46 48 50
Efficiency (%)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, PAR = 8:1 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Gain
Efficiency
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
776 791 806 821 836
Frequency (MHz)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 2.15 A, P
OUT
= 51.8 dBm
Gain
Efficiency
Return Loss
IMD3
Return Loss (dB) / IMD (dBc)
Gain (dB) / Efficiency (%)
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48 50
IMD (dBc)
Output Power avg. (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, 3GPP WCDMA,
PAR=8:1, 10 MHz carrier spacing,
BW 3.84 MHz
ƒ = 821 Lower
ƒ = 821 Upper
ƒ = 806 Lower
ƒ = 806 Upper
ƒ = 791 Lower
ƒ = 791 Upper
-60
-50
-40
-30
-20
39 41 43 45 47 49 51 53 55 57
IMD 3rd Order (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
V
DD
= 30 V, I
DQ
= 2.15 A, tone spacing = 1 MHz
ƒ = 821 MHz
ƒ = 806 MHz
ƒ = 791 MHz
Typical Performance (data taken in a production test xture)
Data Sheet 4 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
0
10
20
30
40
50
16
17
18
19
20
21
39 41 43 45 47 49 51 53 55 57
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up (over temperature)
(P
OUT
- max 3rd order IMD @ -30 dBc)
V
DD
= 30 V, I
DQ
= 2.15 A,
ƒ
1
= 821 MHz, ƒ
2
= 820 MHz
+25°C
+85°C
–30°C
Efficiency
Gain
0
5
10
15
20
25
30
35
40
45
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
39 41 43 45 47 49 51 53 55
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A,
ƒ
1
= 821 MHz, ƒ
2
= 820 MHz
3rd Order IMD
Efficiency
0
5
10
15
20
25
30
35
40
45
50
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
39 41 43 45 47 49 51 53 55
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A,
ƒ
1
= 821 MHz, ƒ
2
= 820 MHz
Gain
Efficiency
-75
-65
-55
-45
-35
-25
-15
39 41 43 45 47 49 51 53 55 57
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 2.15 A,
ƒ
1
= 821 MHz, ƒ
2
= 820 MHz
3rd Order
7th
5th
Typical Performance (cont.)
PTFB082817FH
Confidential, Limited Internal Distribution
Data Sheet 5 of 13 Rev. 02, 2010-12-13
-70
-50
-30
-10
10
30
50
2
6
10
14
18
22
26
36 38 40 42 44 46 48 50 52
Efficiency (%) / ACP (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC (dB) / PARC Gain (dB)
-70
-50
-30
-10
10
30
50
2
6
10
14
18
22
26
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 806 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
PARC (dB) / PARC Gain (dB)
ACP
PARC @ .01% CCDF
Efficiency
Gain
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 791 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC (dB) / PARC Gain (dB)
0
5
10
15
20
25
30
35
40
45
-60
-50
-40
-30
-20
36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 43%
clipping, PAR = 7.5:1 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Low
ACPR Up
Typical Performance (cont.)
Data Sheet 6 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
776 0.92 –1.83 0.96 –1.55
791 0.89 –1.75 0.91 –1.49
806 0.86 –1.68 0.85 –1.42
821 0.83 –1.60 0.79 –1.34
836 0.79 –1.52 0.74 –1.25
See next page for reference circuit information
PTFB082817FH
Confidential, Limited Internal Distribution
Data Sheet 7 of 13 Rev. 02, 2010-12-13
C801
100000 pF
C101
5.1 pF
C112
56 pF
C104
20000 pF
C105
10000 pF
C106
4.7 pF
TL107
TL108 TL109
TL110
TL111
C103
33 pF
TL114
TL115
TL116
TL117
TL118
TL119
TL120
TL121
TL122
TL123
TL124
TL125
TL126
TL127
TL128
TL129
TL130
1
2
3
4
TL103
TL104
TL105 TL106
C802
100000 pF
R801
100 Ohm
R802
1000 Ohm
R803
10 Ohm
TL131
TL132
12
3
TL133
1 2
3
TL134
1 2
3
TL135
1 2
3
TL136
1 2
3
TL137
1 2
3
TL138
1 2
3
TL139
1 2
3
TL112 TL113
R101
10 Ohm
R102
5100 Ohm
C107
4710000 pF
1
2
3
TL140
C108
56 pF
TL141
R103
10 Ohm
C109
12 pF
C110
12 pF
12
3
TL142
C111
2.2 pF
TL101
1
2
3
TL102
C803
100000 pF
R804
1300 Ohm
C804
100000 pF
C805
100000 pF
1
2
3 4
5
6
78
S4
1
2
3
S2
S
C
B
E
1
2
3
4
S1
R805
1200 Ohm
C102
5.6 pF
RF_IN GATE DUT
(Pin G)
b082817fh_bdin_12-14-2010
VDD
TL212
C202
10000000 pF
TL213
TL214
TL215
TL216
TL217
TL218
TL219
TL220 TL221
TL222
TL223
TL224
1
2
3
4
TL203 TL204 TL205
TL206 TL207
VDD
C205
3.6 pF
C206
3.6 pF
C207
1.3 pF
C208
1.3 pF
TL228
TL229
TL230
1
2
3
4
TL231
C209
2.2 pF
C210
2.2 pF
TL232
TL233
1
2
3
4
TL208
12
3
TL209
1
2
3
TL210 12
3
TL211
12
3
TL234
1
2
3
TL235 12
3
TL236
12
3
TL237 TL238
TL239
C211
10000000 pF
C212
1000000 pF
C215
10000000 pF
C216
10000000 pF
12
3
TL240
C219
1000000 pF
C220
10000000 pF
C221
10000000 pF
TL225
TL226
1
2
3
TL227
C203
4.7 pF
C204
56 pF
C237
4710000 pF
C214
4710000 pF
C217
4710000 pF
C218
4710000 pF
C222
10000000 pF
1
2
3
4
TL201
C201
10000 pF
1
2
3
4
TL202
b082817fh_bdout_12-14-2010
DUT
(Pin V)
DRAIN DUT
(Pin D)
DUT
(Pin V)
RF_OUT
VDD
Reference Circuit
Reference circuit input schematic for ƒ = 821 MHz
Reference circuit output schematic for ƒ = 821 MHz
e= 3.48
H = 20 mil
RO/RO4350B1
r
e= 3.48
H = 20 mil
RO/RO4350B1
r
Data Sheet 8 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB082817FH
PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 821 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.005 λ, 51.46 W W = 1.105, L = 1.168 W = 44, L = 46
TL102 0.008 λ, 51.46 W W1 = 1.105, W2 = 1.105, W3 = 1.778 W1 = 44, W2 = 44, W3 = 70
TL103 W1 = 17.780, W2 = 1.778, W3 = 17.780, W1 = 700, W2 = 70, W3 = 700,
W4 = 2.032 W4 = 80
TL104, TL105, TL106, W = 1.105 W = 44
TL107
TL108, TL109, TL110, W = 0.762 W = 30
TL111, TL131
TL112 0.004 λ, 5.33 W W1 = 17.780, W2 = 17.780, W3 = 0.762 W1 = 700, W2 = 700, W3 = 30
TL113 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL114 W1 = 1.676, W2 = 17.780 W1 = 66, W2 = 700
TL115 0.002 λ, 63.89 W W = 0.762, L = 0.508 W = 30, L = 20
TL116 0.043 λ, 5.33 W W = 17.780, L = 8.636 W = 700, L = 340
TL117 0.036 λ, 51.46 W W = 1.105, L = 8.001 W = 44, L = 315
TL118 0.007 λ, 39.10 W W = 1.676, L = 1.511 W = 66, L = 60
TL119 0.023 λ, 51.46 W W = 1.105, L = 5.055 W = 44, L = 199
TL120 0.006 λ, 63.89 W W = 0.762, L = 1.270 W = 30, L = 50
TL121 0.054 λ, 39.10 W W = 1.676, L = 11.722 W = 66, L = 462
TL122 0.013 λ, 63.89 W W = 0.762, L = 2.921 W = 30, L = 115
TL123 0.085 λ, 63.89 W W = 0.762, L = 19.050 W = 30, L = 750
TL124 0.005 λ, 51.46 W W = 1.105, L = 1.016 W = 44, L = 40
TL125 0.002 λ, 63.89 W W = 0.762, L = 0.559 W = 30, L = 22
TL126 0.006 λ, 26.81 W W = 2.794, L = 1.270 W = 110, L = 50
TL127 0.038 λ, 5.33 W W = 17.780, L = 7.645 W = 700, L = 301
TL128 0.034 λ, 51.46 W W = 1.105, L = 7.574 W = 44, L = 298
TL129 0.001 λ, 26.81 W W = 2.794, L = 0.254 W = 110, L = 10
TL130 0.006 λ, 39.10 W W = 1.676, L = 1.270 W = 66, L = 50
TL132 W1 = 1.676, W2 = 1.105 W1 = 66, W2 = 44
TL133 0.009 λ, 39.10 W W1 = 1.676, W2 = 1.676, W3 = 2.032 W1 = 66, W2 = 66, W3 = 80
TL134, TL135, TL136, 0.012 λ, 26.81 W W1 = 2.794, W2 = 2.794, W3 = 2.540 W1 = 110, W2 = 110, W3 = 100
TL137
TL138, TL139 0.010 λ, 26.81 W W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80
TL140 0.009 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 2.032 W1 = 30, W2 = 30, W3 = 80
TL141 0.011 λ, 63.89 W W = 0.762, L = 2.492 W = 30, L = 98
TL142 0.010 λ, 5.33 W W1 = 17.780, W2 = 17.780, W3 = 2.032 W1 = 700, W2 = 700, W3 = 80
PTFB082817FH
Confidential, Limited Internal Distribution
Data Sheet 9 of 13 Rev. 02, 2010-12-13
Reference Circuit (cont.)
Electrical Characteristics at 821 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201, TL202 W1 = 3.810, W2 = 2.540, W3 = 3.810, W1 = 150, W2 = 100, W3 = 150,
W4 = 2.540 W4 = 100
TL203, TL231 W1 = 16.510, W2 = 2.032, W3 = 16.510, W1 = 650, W2 = 80, W3 = 650,
W4 = 2.032 W4 = 80
TL204, TL205, TL206, W = 1.105 W = 44
TL207
TL208 W1 = 16.510, W2 = 1.829, W3 = 16.510, W1 = 650, W2 = 72, W3 = 650,
W4 = 1.829 W4 = 72
TL209, TL236, TL237, 0.012 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 2.540 W1 = 150, W2 = 150, W3 = 100
TL240
TL210, TL235 0.018 λ, 16.47 W W1 = 5.080, W2 = 5.080, W3 = 3.810 W1 = 200, W2 = 200, W3 = 150
TL211 0.000 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 0.025 W1 = 150, W2 = 150, W3 = 1
TL212 W1 = 16.510, W2 = 12.700 W1 = 650, W2 = 500
TL213 0.005 λ, 51.46 W W = 1.105, L = 1.143 W = 44, L = 45
TL214 0.011 λ, 51.46 W W = 1.105, L = 2.489 W = 44, L = 98
TL215 0.051 λ, 51.46 W W = 1.105, L = 11.303 W = 44, L = 445
TL216 0.014 λ, 51.46 W W = 1.105, L = 3.025 W = 44, L = 119
TL217, TL238 0.063 λ, 20.93 W W = 3.810, L = 13.183 W = 150, L = 519
TL218, TL219, TL229, 0.000 λ, 36.77 W W = 1.829, L = 0.025 W = 72, L = 1
TL230, TL232, TL233
TL220 0.036 λ, 5.71 W W = 16.510, L = 7.214 W = 650, L = 284
TL221 0.007 λ, 39.10 W W = 1.676, L = 1.524 W = 66, L = 60
TL222, TL239 0.014 λ, 16.47 W W = 5.080, L = 2.896 W = 200, L = 114
TL223 0.009 λ, 39.10 W W = 1.676, L = 2.032 W = 66, L = 80
TL224 0.033 λ, 5.71 W W = 16.510, L = 6.604 W = 650, L = 260
TL225 W1 = 16.510, W2 = 1.676 W1 = 650, W2 = 66
TL226 0.031 λ, 51.46 W W = 1.105, L = 6.782 W = 44, L = 267
TL227 0.009 λ, 51.46 W W1 = 1.105, W2 = 1.105, W3 = 2.032 W1 = 44, W2 = 44, W3 = 80
TL228 0.094 λ, 5.71 W W = 16.510, L = 18.796 W = 650, L = 740
TL234 0.000 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 0.025 W1 = 150, W2 = 150, W3 = 1
Data Sheet 10 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
PTFB082817_IN_01 RO4350, .020
+
C201
C205
C202
C212
C221
C214
C208
C209
C211
C203
C216
C206
C204
C207
C215
C102
C111
C110
R804
R803 R802
R801
R805
R102
C801
C802
C803
C101
C103 C104
C105C106
C109
R103
C107
C108
R101
S1S4
C112
S2
C805
PTFB082817_OUT_01 RO4350, .020 (62)
+
10 µF
+
10 µF
C237
C222
C217
C218
C219
C220
RF_IN RF_OUT
VDD
VDD
VDD
b0 8 2 8 1 7 f h _ C D _ 1 2 - 1 3 - 2 0 1 0
C210
C804
C209
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB082817FH
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
PTFB082817FH
Confidential, Limited Internal Distribution
Data Sheet 11 of 13 Rev. 02, 2010-12-13
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101 Chip capacitor, 5.1 pF ATC ATC100B5R1CW
C102 Chip capacitor, 5.6 pF ATC ATC100B5R6CW
C103 Chip capacitor, 33 pF ATC ATC100B330JW
C104 Capacitor, 20000 pF Digi-Key ATC200B203MW
C105 Capacitor, 10000 pF Digi-Key ATC200B103MW
C106 Chip capacitor, 4.7 pF ATC ATC100B4R7CT
C107 Chip capacitor, 4.71 μF ATC 493-2372-2-ND
C108, C112 Chip capacitor, 56 pF ATC ATC100B560JT
C109 Chip capacitor, 12 pF ATC ATC100B120FW500XB
C110 Chip capacitor, 12 pF ATC ATC100B120JW
C111 Chip capacitor, 2.2 pF ATC ATC100B2R2CW
C801, C804 Chip capacitor, 0.1 μF ATC PCC104BCT-ND
C802, C803, C805 Chip capacitor, 0.1 μF ATC PCC1772CT-ND
R101, R103, R803 Resistor, 10 W Digi-Key P10ECT-ND
R102 Resistor, 5100 W Digi-Key P5.1KECT-ND
R801 Resistor, 100 W Digi-Key P10ECT-ND
R802 Resistor, 1000 W Digi-Key P1.0KECT-ND
R804 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R805 Resistor, 1200 W Digi-Key P1.2KGCT-ND
S1 Transistor Digi-Key BCP5616TA-ND
S2 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S4 Voltage Regulator Digi-Key LM78L05ACM-ND
Output
C201, C222 Capacitor, 10000 pF Digi-Key ATC200B103MW
C202, C211 Chip capacitor, 10 µF ATC 281M5002106k
C203 Chip capacitor, 4.7 pF ATC ATC100B4R7CT
C204 Chip capacitor, 56 pF ATC ATC100B560JT
C205, C206 Chip capacitor, 3.6 pF ATC ATC100B3R6CW
C207, C208 Chip capacitor, 1.3 pF ATC ATC100B1R3CW
C209, C210 Chip capacitor, 2.2 pF ATC ATC100B2R2CW
C212, C219 Chip capacitor, 1 μF ATC 478-3993-2-ND
C214, C217, C218, C237 Chip capacitor, 4.71 μF ATC 490-1864-2-ND
C215, C216, C220, C221 Capacitor, 10 μF Digi-Key 587-1818-2-ND
Data Sheet 12 of 13 Rev. 02, 2010-12-13
PTFB082817FH
Confidential, Limited Internal Distribution
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[.500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[.385]
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[
.159
+.010
-.005
]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
V V
S
2X 30°
C 66065-A0003-C743-01-0027 H-34288-4_2 .dwg
L
C
4X R0.508
+.381
-.127
[
R.020+.015
-.005
]
Package Outline Specications
Package H-34288-4/2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Data Sheet 13 of 13 Rev. 02, 2010-12-13
Edition 2010-12-13
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2010 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB082817FH V1
Condential, Limited Internal Distribution
Revision History: 2010-12-13 Data Sheet
Previous Version: 2010-11-02, Advance Data Sheet
Page Subjects (major changes since last revision)
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