Product Datasheet Search Results:

PTFB082817FHV1.pdf13 Pages, 547 KB, Original
PTFB082817FHV1
Infineon Technologies Ag
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
PTFB082817FHV1R250.pdf13 Pages, 547 KB, Original
PTFB082817FHV1R250
Infineon Technologies Ag
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Infineon.com/PTFB082817FHV1
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package ...
1476 Bytes - 04:38:09, 13 November 2024
Infineon.com/PTFB082817FHV1R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package ...
1500 Bytes - 04:38:09, 13 November 2024

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