Product Datasheet Search Results:

NE5500479A-T1.pdf9 Pages, 54 KB, Original
NE5500479A-T1
Nec Electronics
3.5 V Operation Silicon RF Power LDMOS FET for 900 MHz 1 W Transmission Amplifiers
NE5500479A-T1.pdf11 Pages, 190 KB, Original
NE5500479A-T1
Renesas Electronics
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
NE5500479A-T1-A.pdf9 Pages, 54 KB, Original
NE5500479A-T1-A
Renesas Electronics
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Renesas.com/NE5500479A-T1
{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"10 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Desc...
1433 Bytes - 07:39:36, 03 December 2024
Renesas.com/NE5500479A-T1-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"10 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"8 V","Transistor Application...
1525 Bytes - 07:39:36, 03 December 2024

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