Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10119EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
SILICO N POWER MOS FET
NE5500479A
3.5 V OPERATION SILICON RF POWER LDMOS FET
FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS
DATA SHEET
NEC Compound Semiconductor Devices 1999, 2003
The mark
shows major revised poi nts.
DESCRIPTION
The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6
µ
m WSi gate laterally diffused
MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power
added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver
35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers.
FEATURES
• High output power : Pout = 31.5 dBm TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)
• High power added efficiency :
η
add = 62% TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm)
• High linear gain : GL = 15.0 dB TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm)
• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
• Single supply : VDS = 3.0 to 8.0 V
APPLICATIONS
• Analog cellular phones : 3.5 V AMPS handsets
• Digital cellular phones : 4.8 V GSM 900 class 4 handsets
• Others : General purpose amplifiers for 800 to 1 000 MHz TDMA applications
ORDERING INFORMATION
Part Number Pack age M arking Supplyi ng Form
NE5500479A-T1 79A R4 • 12 mm wide embossed taping
• Gate pin face the perforati on side of the tape
• Qty 1 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500479A
Data Sheet PU10119EJ03V0DS
2
NE5500479A
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Drain to Sourc e V ol tage VDS 20.0 V
Gate to Source Voltage VGS 5.0 V
Drain Current ID1.0 A
Drain Current (Pulse Test) ID Note 2.0 A
Total Power Dissipation Ptot 10 W
Channel Temperature Tch 125 °C
Storage Temperat ure Tstg −65 to +125 °C
Note Duty Cycle ≤ 50%, Ton ≤ 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Test Condi tions MIN. TYP. MAX. Unit
Drain to Sourc e Voltage VDS 3.0 3.5 8.0 V
Gate to Source Voltage VGS 02.03.5V
Drain Current ID−600 700 mA
Input Power Pin f = 900 MHz , V DS = 3.5 V 18 20 22 dBm
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSS VGSS = 5.0 V −−100 nA
Drain to Sourc e Leakage Current
(Zero Gate Volt age Drai n Current) IDSS VDSS = 8.5 V −−100 nA
Gate Threshold V ol t age Vth VDS = 4.8 V, ID = 1 mA 1.0 1.35 2.0 V
Transconductance GmVDS = 4. 8 V , ID = 600 mA −1.43 −S
Drain to Source Breakdown Voltage BVDSS IDSS = 10
µ
A2024−V
Thermal Resistance Rth Channel to Case −10 −°C/W
Linear Gain GLf = 900 MHz, P in = 10 dBm,
VDS = 3.5 V, IDset = 300 mA, Note
−15.0 −dB
Output Power Pout f = 900 MHz , Pin = 20 dBm, 30.5 31.5 −dBm
Operating Current Iop VDS = 3.5 V, IDset = 300 mA, Note −600 −mA
Power Added Efficiency
η
add 55 62 −%
Note DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
Data Sheet PU10119EJ03V0DS 3
NE5500479A
TYPICAL CHARACTERIS TICS (TA = +25°
°°
°C)
V
GS
= 10 V MAX.
Step = 1.0 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
14.0
4.0
6.0
12.0
8.0
10.0
2.0
0161412108624
V
DS
= 3.5 V
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Set Drain Current I
Dset
(mA)
Gate to Source Voltage V
GS
(V)
10 000
100
1 000
10
13.02.52.01.51.0
V
DS
= 3.5 V
I
Dset
= 300 mA
f = 900 MHz P
out
I
D
Output Power P
out
(dBm)
Drain Current I
D
(mA)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
35
20
30
25
15
10
1 250
1 000
750
500
250
0
302515105020
V
DS
= 3.5 V
I
Dset
= 300 mA
f = 900 MHz
d
η
add
η
100
50
030252015105
Drain Efficiency
d
(%)
η
Power Added Efficiency
add
(%)
η
Input Power P
in
(dBm)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
DS
= 3.5 V
f = 900 MHz
P
in
= 20 dBm P
out
I
D
Output Power P
out
(dBm)
Drain Current I
D
(mA)
Gate to Source Voltage V
GS
(V)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
32
29
31
30
28
27
1 250
1 000
750
500
250
0
4.02.01.00.0 3.0
V
DS
= 3.5 V
f = 900 MHz
P
in
= 20 dBm
100
50
04.03.02.01.0
Drain Efficiency
d
(%)
η
Power Added Efficiency
add
(%)
η
Gate to Source Voltage V
GS
(V)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
d
η
add
η
Data Sheet PU10119EJ03V0DS
4
NE5500479A
V
DS
= 3.0 V
I
Dset
= 300 mA
f = 900 MHz P
out
I
D
Output Power P
out
(dBm)
Drain Current I
D
(mA)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
35
20
30
25
15
10
1 250
1 000
750
500
250
0
302515105020
V
DS
= 3.0 V
I
Dset
= 300 mA
f = 900 MHz
d
η
add
η
100
50
030252015105
Drain Efficiency
d
(%)
η
Power Added Efficiency
add
(%)
η
Input Power P
in
(dBm)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
DS
= 3.0 V
f = 900 MHz
P
in
= 20 dBm P
out
I
D
Output Power P
out
(dBm)
Drain Current I
D
(mA)
Gate to Source Voltage V
GS
(V)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
31
28
30
29
27
26
1 250
1 000
750
500
250
0
4.02.01.00.0 3.0
V
DS
= 3.0 V
f = 900 MHz
P
in
= 20 dBm
100
50
04.03.02.01.0
Drain Efficiency
d
(%)
η
Power Added Efficiency
add
(%)
η
Gate to Source Voltage V
GS
(V)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
d
η
add
η
Remark The graphs indicate nominal characteristics.
Data Sheet PU10119EJ03V0DS 5
NE5500479A
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
LARGE SIGNAL IMPEDANCE (VDS = 3.5 V, ID = 300 mA, Pin = 20 dBm)
f (MHz) Zin (Ω)ZOL (Ω) Note
900 TBD TBD
Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
Data Sheet PU10119EJ03V0DS
6
NE5500479A
PACKAGE DIMENSIONS
79A (UNIT: mm)
0.9±0.2
0.2±0.1
(Bottom View)
3.6±0.2
1.5±0.2
1.2 MAX.
0.8 MAX.
1.0 MAX.
Source
Gate Drain
0.4±0.15
5.7 MAX.
5.7 MAX.
0.6±0.15
0.8±0.15
4.4 MAX.
4.2 MAX.
Source
Gate Drain
R4
92
79A PACKAGE RECOMMENDE D P.C.B. LAYOUT (UNIT: mm)
1.7
4.0
0.5
1.0
5.9
1.2
Gate
Source
Drain
0.5
6.1
0.5 Through Hole: 0.2 × 33
φ
Stop up the hole with a rosin or
something to avoid solder flow.
Data Sheet PU10119EJ03V0DS 7
NE5500479A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Condit i ons Condition Symbol
Infrared Refl ow Peak temperature (package surface t em perat ure) : 260°C or below
Time at peak t em perature : 10 seconds or less
Time at tem perature of 220°C or higher : 60 sec onds or less
Preheating t i m e at 120 to 180°C : 120±30 sec onds
Maxim um num ber of reflow processes : 3 tim es
Maxim um chlorine cont ent of rosin flux (% m ass) : 0.2%(Wt.) or below
IR260
VPS Peak temperature (pack age surface t em perature) : 215°C or bel ow
Time at tem perature of 200°C or higher : 25 to 40 seconds
Preheating t i m e at 120 to 150°C : 30 to 60 seconds
Maxim um num ber of reflow processes : 3 tim es
Maxim um chlorine cont ent of rosin flux (% m ass) : 0.2%(Wt.) or below
VP215
Wave Solderi ng Peak temperature (molt en solder temperat ure) : 260°C or below
Time at peak t em perature : 10 seconds or less
Preheating t em perature (package s urface temperature) : 120°C or below
Maxim um num ber of flow processes : 1 tim e
Maxim um chlorine cont ent of rosin flux (% m ass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (pi n temperature) : 350°C or below
Soldering ti m e (per pi n of device) : 3 sec onds or less
Maxim um chlorine cont ent of rosin flux (% m ass) : 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10119EJ03V0DS
8
NE5500479A
M8E 00. 4 - 0110
The information in this document is current as of July, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0306
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
NE5500479A
