Product Datasheet Search Results:
1 Pages, 174 KB, Scan- MJ11012
- Advanced Semiconductor, Inc.
- RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE
4 Pages, 51 KB, Original- MJ11012
- Central Semiconductor Corp.
- 30 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
4 Pages, 51 KB, Original- MJ11012LEADFREE
- Central Semiconductor Corp.
- 30 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
3 Pages, 115 KB, Scan- MJ11012
- Motorola / Freescale Semiconductor
- 30 Amp Darlington Power Transistors Complementary Silicon 60-120 Volts 200 Watts
3 Pages, 140 KB, Original- MJ11012
- Mospec Semiconductor
- POWER TRANSISTORS(30A,60-120V,200W)
4 Pages, 66 KB, Original- MJ11012
- On Semiconductor
- High-Current Complementary Silicon Transistors
4 Pages, 66 KB, Original- MJ11012-D
- On Semiconductor
- High-Current Complementary Silicon Transistors
4 Pages, 117 KB, Original- MJ11012G
- On Semiconductor
- TRANS DARL NPN 30A 60V TO-3 - MJ11012G
3 Pages, 251 KB, Scan- MJ11012
- Solid State
- Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 200 W, 30 A, 1000
1 Pages, 201 KB, Original- MJ11012
- Solid State Inc.
- Trans Darlington NPN 9999-Pin(9999+Tab) TO-3
Product Details Search Results:
Centralsemi.com/MJ11012
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN\/PEG","Power Dissipation Ambient-Max":"200 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"4 MHz","Collector Current-Max (IC)":"30 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"...
1336 Bytes - 21:35:02, 20 September 2024
Centralsemi.com/MJ11012LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"PIN\/PEG","Power Dissipation Ambient-Max":"200 W","Collector Current-Max (IC)":"30 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"60 V","Terminal Position":"BOTTOM","Case Connection":"COLLECTOR","Mfr Package Desc...
1434 Bytes - 21:35:02, 20 September 2024
N_a/MJ11012
{"Category":"Transistor, Darlington Transistor","Amps":"30A","MHz":">4 MHz","Volts":"60V"}...
543 Bytes - 21:35:02, 20 September 2024
Onsemi.com/MJ11012G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30A","Online Catalog":"NPN Transistors","Transistor Type":"NPN - Darlington","Frequency - Transition":"4MHz","Product Photos":"TO-3 Pkg","Vce Saturation (Max) @ Ib, Ic":"4V @ 300mA, 30A","Current - Collector Cutoff (Max)":"1mA","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-3","Packaging":"Tray","Datasheets":"MJ11012,15,16","Power - Max":"200W","Family":"Tr...
1706 Bytes - 21:35:02, 20 September 2024
Solidstateinc.com/MJ11012
{"Collector Emitter Voltage V(br)ceo:":"60 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"30 A","Power Dissipation Pd:":"200 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"1000","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"No SVHC (15-Jun-2015)","Transition Frequency Typ ft:":"-"}...
1352 Bytes - 21:35:02, 20 September 2024
Solid_state_inc_/MJ11012
{"Polarity":"NPN","Mounting":"Through Hole","Rad Hardened":"No","Package Type":"TO-3","Configuration":"Single","Number of Elements":"1"}...
1108 Bytes - 21:35:02, 20 September 2024
