© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 5
1Publication Order Number:
MJ11012/D
MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current
Complementary Silicon
Transistors
. . . for use as output devices in complementary general purpose
amplifier applications.
•High DC Current Gain −
hFE = 1000 (Min) @ IC − 20 Adc
•Monolithic Construction with Built−in Base Emitter Shunt
Resistor
•Junction Temperature to +200_C
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ11012
MJ11015/6
VCEO 60
120
Vdc
Collector−Base Voltage
MJ11012
MJ11015/6
VCB 60
120
Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current IC30 Adc
Base Current IB1 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C @ TC = 100°C
PD200
1.15
W
W/°C
Operating Storage Junction
Temperature Range
TJ, Tstg −55 to + 200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.87 °C/W
Maximum Lead Temperature for Sol-
dering Purposes for ≤ 10 Seconds
TL275 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 AMPERE DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 − 120 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING
DIAGRAM
MJ1101x = Device Code
x = 2, 5 or 6
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1101xG
AYYWW
MEX
Device Package Shipping
ORDERING INFORMATION
MJ11012 TO−3 100 Units/Tray
MJ11012G TO−3
(Pb−Free)
100 Units/Tray
COLLECTOR
CASE
BASE
1
EMITTER 2
COLLECTOR
CASE
BASE
1
EMITTER 2
NPN PNP
MJ11016 MJ11015
MJ11012
Preferred devices are recommended choices for future use
and best overall value.
MJ11015 TO−3 100 Units/Tray
MJ11015G TO−3
(Pb−Free)
100 Units/Tray
MJ11016 TO−3 100 Units/Tray
MJ11016G TO−3
(Pb−Free)
100 Units/Tray
21
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
2
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈8.0 k ≈40
PNP
MJ11015
BASE
EMITTER
COLLECTOR
≈8.0 k ≈40
NPN
MJ11012
MJ11016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristics
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0) MJ11012
MJ11015, MJ11016
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
V(BR)CEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
60
120
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1k ohm) MJ11012
(VCE = 120 Vdc, RBE = 1k ohm) MJ11015, MJ11016
(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) MJ11012
(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C) MJ11015, MJ11016
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICER
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1
1
5
5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Leakage Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 20 Adc,VCE = 5 Vdc)
(IC = 30 Adc, VCE = 5 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1000
200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
(IC = 30 Adc, IB = 300 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
3
4
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage
(IC = 20 A, IB = 200 mAdc)
(IC = 30 A, IB = 300 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
3.5
5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain Bandwidth Product
(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
ÎÎÎ
4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
3
30 k
0.3
Figure 2. DC Current Gain (1)
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1 2 3 10 20 30
7 k
3 k
2 k
700
Figure 3. Small−Signal Current Gain
hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZE
D
2
10
f, FREQUENCY (kHz)
20 30 50 70 200 300 500 1.0 k
0.2
0.05
0.02
0.01
10 k
5 k
hFE, DC CURRENT GAIN
VCE = 5 Vdc
TJ = 25°C
500
300 5 7 100
5
0.1
Figure 4. “On” Voltages (1)
IC, COLLECTOR CURRENT (AMP)
100
0
VBE(sat)
Figure 5. Active Region DC Safe Operating Area
20 k PNP MJ11015
NPN MJ11012, MJ11016
V, VOLTAGE (VOLTS)
4
3
2
1
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
35 10 20 200
10
5
0.01
20
IC, COLLECTOR CURRENT (AMP)
2
1
0.2
0.1
0.5
0.05
0.02
50
TJ = 25°C
IC/IB = 100
VCE = 3 Vdc
IC = 10 mAdc
TJ = 25°C
0.1
0.5
1
0.005
700
MJ11012
MJ11015, MJ11016
27 30 70 100220500.2 0.5 1 105
VCE(sat)
PNP MJ11015
NPN MJ11012, MJ11016
PNP MJ11015
NPN MJ11012, MJ11016
BONDING WIRE LIMITATION
THERMAL LIMITATION @ TC = 25°C
SECOND BREAKDOWN LIMITATION
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T−SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
U
L
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
MJ11012/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
