Product Datasheet Search Results:
7 Pages, 202 KB, Original- JANTX2N7225
- International Rectifier
- 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 233 KB, Scan- JANTX2N7225D
- International Rectifier
- 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
7 Pages, 154 KB, Original- JANTX2N7225U
- International Rectifier
- 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 922 KB, Original- JANTX2N7225
- Microsemi Corp.
- 27.4 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
9 Pages, 898 KB, Original- JANTX2N7225U
- Microsemi Corp.
- 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB
5 Pages, 43 KB, Original- JANTX2N7225
- Omnirel
- 27.4A N-channel enhancement mode MOSFET power transistor
3 Pages, 558 KB, Original- JANTX2N7225
- Semicoa
- POWER, FET
Product Details Search Results:
Irf.com/JANTX2N7225
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1521 Bytes - 21:21:00, 03 October 2024
Irf.com/JANTX2N7225D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1471 Bytes - 21:21:00, 03 October 2024
Irf.com/JANTX2N7225U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1560 Bytes - 21:21:00, 03 October 2024
Microsemi.com/JANTX2N7225
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"105 mOhm @ 27.4A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/592","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N7224,25,27,28","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vds...
1581 Bytes - 21:21:00, 03 October 2024
Microsemi.com/JANTX2N7225U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"105 mOhm @ 27.4A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/592","Package \/ Case":"TO-267AB","Supplier Device Package":"TO-267AB","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N7224,25,27,28U","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"200V","Current - Con...
1565 Bytes - 21:21:00, 03 October 2024
Semicoa.com/JANTX2N7225
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
700 Bytes - 21:21:00, 03 October 2024
