Product Datasheet Search Results:
23 Pages, 167 KB, Original- JANTX2N6800
- Defense Supply Center Columbus
- N-Channel FET
23 Pages, 167 KB, Original- JANTX2N6800U
- Defense Supply Center Columbus
- N-Channel FET
7 Pages, 1174 KB, Original- JANTX2N6800
- Infineon Technologies Ag
- Trans MOSFET N-CH 400V 3A 3-Pin TO-39
5 Pages, 45 KB, Original- JANTX2N6800
- International Rectifier
- 3 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 199 KB, Original- JANTX2N6800U
- International Rectifier
- 3 A, 400 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 998 KB, Original- JANTX2N6800
- Microsemi Corp.
- 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
4 Pages, 173 KB, Original- JANTX2N6800U
- Microsemi Corporation
- N Channel MOSFET; Package: U;
5 Pages, 45 KB, Original- JANTX2N6800
- Omnirel
- N-channel enhancement mode MOSFET power transistor
3 Pages, 570 KB, Original- JANTX2N6800
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N6800
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1453 Bytes - 06:32:32, 23 September 2024
Irf.com/JANTX2N6800
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1503 Bytes - 06:32:32, 23 September 2024
Irf.com/JANTX2N6800U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.5100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.15 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1544 Bytes - 06:32:32, 23 September 2024
Microsemi.com/JANTX2N6800
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98, 6800,02","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (V...
1585 Bytes - 06:32:32, 23 September 2024
Microsemi.com/JANTX2N6800U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vds...
1593 Bytes - 06:32:32, 23 September 2024
Semicoa.com/JANTX2N6800
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
703 Bytes - 06:32:32, 23 September 2024
