TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0148 Rev. 1 (092062) Page 1 of 4
DEVICES LEVELS
2N6800 2N6800U JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 400 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 3.0 Adc
Continuous Drain Current
T
C = +100°C ID2 2.0 Adc
Max. Power Dissipation Ptl 25
(1) W
Drain to Source On State Resistance Rds(on) 1.0
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 2.0A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 400 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 320V
VGS = 0V, VDS = 320V, Tj = +125°C
IDSS1
IDSS2
25
0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 2.0A pulsed
VGS = 10V, ID = 3.0A pulsed
Tj = +125°C
VGS = 10V, ID = 2.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
1.0
1.10
2.40
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 3.0A pulsed VSD 1.4 Vdc
TO-205AF
(formerly TO-39)
U – 18 LCC
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0148 Rev. 1 (092062) Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 3.0A
VDS = 200V
Qg(on)
Qgs
Qgd
34.75
5.75
16.59
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 3.0A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 176Vdc
td(on)
tr
td(off)
tf
30
35
55
35
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 3.0A trr 700 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0148 Rev. 1 (092062) Page 3 of 4
PACKAGE DIMENSIONS
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .305 .355 7.75 9.02
CH .160 .180 4.07 4.57
HD .335 .370 8.51 9.39
h .009 .041 0.23 1.04
J .028 .034 0.72 0.86 2
k .029 .045 0.74 1.14 3
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.7 19.05 7, 8
LS .200 TP 5.08 TP 6
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .070 1.78 5
Q .050 1.27 4
r .010 0.25 9
α 45° TP 45° TP 6
NOTES:
1 Dimensions are in inches. Millimeters are given for general information only.
2 Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
3 Dimension k measured from maximum HD.
4 Outline in this zone is not controlled.
5 Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7 All three leads.
8 Radius (r) applies to both inside corners of tab.
9 Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for TO-205AF.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0148 Rev. 1 (092062) Page 4 of 4
Dimensions
Ltr Inches Millimeters
Min Max Min Max
BL .345 .360 8.77
BW .280 .295 7.11
CH .095 .115 2.41
LL1 .040 .055 1.02
LL2 .055 .065 1.40
LS .050 BSC 1.27 BSC
LS1 .025 BSC 0.635 BSC
LS2 .008 BSC 0.203 BSC
LW .020 .030 0.51 0.76
Q1 .105 REF 2.67 REF
Q2 .120 REF 3.05 REF
Q3 .045 .055 1.14 1.40
TL .070 .080 1.78 2.03
TW .120 .130 3.05 3.30
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
4 Ceramic package only.
