Product Datasheet Search Results:
7 Pages, 1325 KB, Original- JANTX2N6788
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 6A 3-Pin TO-39
7 Pages, 200 KB, Original- JANTX2N6788
- International Rectifier
- 6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 291 KB, Original- JANTX2N6788U
- International Rectifier
- 4.5 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
7 Pages, 643 KB, Original- JANTX2N6788
- Microsemi Corp.
- 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
8 Pages, 646 KB, Original- JANTX2N6788U
- Microsemi
- Trans MOSFET N-CH 100V 4.5A 18-Pin CLCC
3 Pages, 577 KB, Original- JANTX2N6788
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N6788
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1453 Bytes - 16:42:41, 08 January 2025
Irf.com/JANTX2N6788
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1486 Bytes - 16:42:41, 08 January 2025
Irf.com/JANTX2N6788U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1559 Bytes - 16:42:41, 08 January 2025
Microsemi.com/JANTX2N6788
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/555","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Co...
1568 Bytes - 16:42:41, 08 January 2025
Microsemi.com/JANTX2N6788U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/555","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"1...
1590 Bytes - 16:42:41, 08 January 2025
Semicoa.com/JANTX2N6788
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
701 Bytes - 16:42:41, 08 January 2025
Documentation and Support
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