Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 25\u00b5A","Series":"-","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXT(H,T)1N100","Rds On (Max) @ Id, Vgs":"11 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"60W","Standard Package":"30","Drain to Source Voltage (Vdss)":"1000V (1kV)","Cur...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXTT1N250HV","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-268","Datasheets":"IXTT1N250HV","Rds On (Max) @ Id, Vgs":"40 Ohm @ 750mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"250W","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Mountin...

{"Category":"Discrete Semiconductor Products","Packaging":"Tube","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-268","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 250\u00b5A","Series":"-","Package / Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Rds On (Max) @ Id, Vgs":"85 Ohm @ 50mA, 10V","Datasheets":"IXTT1N450HV","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"30","Power - Max":"520W","Featured Product":"4500 V Power MOSF...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"520(W)","Continuous Drain Current":"1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"4500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-268","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"11 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technolo...