Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1.5 A
IDM TC= 25°C, pulse width limited by TJM 6A
IAR 1.5 A
EAR TC= 25°C6mJ
EAS TC= 25°C 200 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3 V/ns
TJ≤ 150°C, RG = 18 Ω
PDTC= 25°C60W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
High V oltage MOSFET
G = Gate, D = Drain,
S = Source, TAB = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 1000 V
VGS(th) VDS = VGS, ID = 25 µA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C 500 µA
RDS(on) VGS = 10 V, ID = 1.0A 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
International standard packages
High voltage, Low RDS (on) HDMOSTM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
98886 (1/2)
© 2002 IXYS All rights reserved
VDSS = 1000 V
ID25 = 1.5 A
RDS(on) = 11 ΩΩ
ΩΩ
Ω
Advance Technical Information
IXTH 1N100
IXTT 1N100
N-Channel Enhancement Mode
Avalanche Energy Rated
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
(TAB)
G
S
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 1N100
IXTT 1N100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 1.0A, pulse test 0.8 1.5 S
Ciss 480 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 pF
Crss 15 pF
td(on) 18 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 19 ns
td(off) RG= 18Ω, (External) 20 ns
tf18 ns
Qg(on) 23 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 4.5 nC
Qgd 14 nC
RthJC 2.3 K/W
RthCK TO-247 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1.5 A
ISM Repetitive; pulse width limited by TJM 6A
VSD IF = IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
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