Product Details Search Results:
Ixys.com/IXTH67N10
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"MegaMOS\u2122","Standard Package":"30","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXT(H,M,T) 67N10, 75N10","Rds On (Max) @ Id, Vgs":"25 mOhm @ 33.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"300W","Package / Case":"TO-247-3","Mounting Type":"Through H...
1650 Bytes - 07:59:29, 01 January 2025
Ixys.com/IXTH67N10MA
{"Absolute Max. Power Diss. (W)":"300","Package":"TO-247(5)","V(BR)DSS (V)":"100","I(D) Abs. Drain Current (A)":"67","r(DS)on Max. (Ohms)":"25m"}...
655 Bytes - 07:59:29, 01 January 2025
Ixys.com/IXTH67N10MB
{"Absolute Max. Power Diss. (W)":"300","Package":"TO-247(5)","V(BR)DSS (V)":"100","I(D) Abs. Drain Current (A)":"67","r(DS)on Max. (Ohms)":"25m"}...
656 Bytes - 07:59:29, 01 January 2025
Zilog.com/IXTH67N10
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"67 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"268 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1474 Bytes - 07:59:29, 01 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXTH67N10.pdf | 0.56 | 1 | Request |
