MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS(on) 67 A 25 m 75 A 20 m 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 67N10 75N10 67 75 A A IDM TC = 25C, pulse width limited by TJM 67N10 75N10 268 300 A A PD Maximum Ratings TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 TO-247 TO-268 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 18 6 5 10 (TAB) TO-204 AE (IXTM) TO-268 (IXTT) G G = Gate, S = Source, g g g Features C z z z z z z Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 * VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 V 4 V 100 nA z z 250 1 A mA z z z z z TJ = 25C TJ = 125C 67N10 75N10 Pulse test, t 300 s, duty cycle d 2 % 0.025 0.020 (c) 2003 IXYS All rights reserved S D (TAB) D = Drain, TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages z z z IXYS reserves the right to change limits, test conditions, and dimensions. G Applications z VDSS D Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density DS91533F(9/03) 1 http://store.iiic.cc/ IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = ID25, pulse test 25 30 S 4500 pF 1300 pF Crss 550 pF td(on) 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 td(off) RG = 2 , (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 Qgd (TO-204, TO-247) 60 110 ns 140 ns 30 60 ns 180 260 nC 30 70 nC 90 160 nC 0.42 K/W Source-Drain Diode Symbol Test Conditions IS VGS = 0 V 0.25 1 Terminals: 1 - Gate 3 - Source 67 75 A A 67N10 75N10 268 300 A A 1.75 V VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % trr IF = IS, -di/dt = 100 A/s, VR = 100 V 200 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC K/W 67N10 75N10 Repetitive; pulse width limited by TJM 3 Dim. Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. ISM 2 ns 100 RthJC RthCK 60 TO-247 AD (IXTH) Outline Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-204AE (IXTM) Outline ns TO-268 (IXTT) Outline Pins 1 - Gate 2 - Source Case - Drain Dim. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 http://store.iiic.cc/ 5,187,117 5,237,481 5,486,715 5,381,025 Millimeter Min. Max. A 6.4 11.4 A1 3.42 b .97 1.09 D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L p p1 q R R1 s .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 7.93 3.84 4.19 3.84 4.19 30.15 BSC 13.33 4.77 16.64 17.14 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343 IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig. 1 Output Characteristics 200 125 8V 100 7V 50 ID - Amperes 9V 150 Input Admittance 150 VGS = 10V TJ = 25C ID - Amperes Fig. 2 100 75 50 25 6V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 125C 0 1 2 3 VDS - Volts Fig. 4 6 7 8 9 10 Temperature Dependence of Drain to Source Resistance 2.50 1.4 TJ = 25C 2.25 RDS(on) - Normalized 1.3 RDS(on) - Normalized 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.2 VGS = 10V 1.1 1.0 VGS = 15V 0.9 0.8 4 TJ = 25C 2.00 1.75 1.50 ID = 37.5A 1.25 1.00 0.75 0 20 40 60 80 0.50 -50 100 120 140 160 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 1.1 BV/VG(th) - Normalized 67N10 60 ID - Amperes 1.2 75N10 40 20 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2003 IXYS All rights reserved 3 http://store.iiic.cc/ IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 100 ID - Amperes VGS - Volts 7 10s Limited by RDS(on) 6 5 4 3 100s 1ms 10ms 10 100ms 2 1 0 0 25 50 75 1 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 6000 150 5000 125 Ciss IS - Amperes Capacitance - pF Fig.9 Capacitance Curves 4000 f = 1MHz VDS = 25V 3000 2000 Coss 1000 0 100 100 75 50 TJ = 125C TJ = 25C 0.50 1.00 25 Crss 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.75 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 http://store.iiic.cc/ 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343