Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"TrenchT2\u2122","Standard Package":"50","Supplier Device Package":"TO-263 (IXTA)","Datasheets":"IXT(A,P)200N055T2","Rds On (Max) @ Id, Vgs":"4.2 mOhm @ 50A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"200(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"360(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"600 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0042 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"500 A","Channel Type":"N-CHANNEL","FET Te...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"600 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0042 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"500 A","Channel Type":"N-CHANNEL","FET Te...