IXTA200N055T2 IXTP200N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 TC = 25C 200 A ILRMS Lead Current Limit, RMS 120 A IDM TC = 25C, Pulse Width Limited by TJM 500 A IA TC = 25C 100 A EAS TC = 25C 600 mJ PD TC = 25C 360 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 = 55V = 200A 4.2m S (TAB) TO-220 G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z z International Standard Packages 175C Operating Temperature High Current Handling Capability Avalanche Rated Low RDS(on) Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V TJ = 150C VGS = 10V, ID = 50A, Notes 1, 2 (c) 2008 IXYS CORPORATION, All rights reserved 3.3 4.0 V 200 nA Easy to Mount Space Savings High Power Density Applications z z 5 A z 50 A z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications 4.2 m DS99919C(11/08) IXTA200N055T2 IXTP200N055T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 30V, ID = 50A RG = 3.3 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 80 S 6970 pF 1026 pF 228 pF 26 ns 22 ns 49 ns 27 ns 109 nC 35 nC 24 nC 0.42 C/W RthJC RthCH TO-263 (IXTA) Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 A ISM Repetitive, Pulse Width Limited by TJM 600 A VSD IF = 50A, VGS = 0V, Note 1 1.1 V trr IF = 100A, VGS = 0V IRM -di/dt = 100A/s VR = 27V QRM 49 ns 2.6 A 64 nC TO-220 (IXTP) Outline Notes: 1. Pulse Test, t 300s; Duty Cycle, d 2%. 2. On Through-Hole Packages, RDS(on) Kelvin Test Contact Location must be 5mm or Less from the Package Body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA200N055T2 IXTP200N055T2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 350 200 VGS = 15V 10V 9V 8V 180 160 8V 250 140 7V ID - Amperes ID - Amperes VGS = 15V 10V 9V 300 120 100 6V 80 60 7V 200 150 6V 100 40 50 20 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150C Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature 200 2.2 VGS = 15V 10V 9V 8V 180 160 VGS = 10V 2.0 1.8 ID - Amperes RDS(on) - Normalized 7V 140 120 100 6V 80 60 I D = 200A 1.6 I D = 100A 1.4 1.2 1.0 40 5V 0.8 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 130 2.4 120 2.2 TJ = 175C External Lead Current Limit 110 2.0 100 90 1.8 1.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VGS = 10V 15V - - - - 1.4 1.2 80 70 60 50 40 30 1.0 20 TJ = 25C 0.8 10 0 0.6 0 50 100 150 200 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA200N055T2 IXTP200N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40C 180 120 160 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 150C 25C - 40C 80 60 25C 80 150C 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 280 VDS = 28V 9 I D = 100A 240 8 200 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 160 120 TJ = 150C 80 6 5 4 3 TJ = 25C 2 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 50 60 70 80 90 100 110 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit f = 1 MHz 25s Ciss 10,000 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs VSD - Volts Coss 100 100s External Lead Limit 1ms 10 1,000 DC, 100ms Crss TJ = 175C 10ms TC = 25C Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_200N055T2(V5)12-15-08-C IXTA200N055T2 IXTP200N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 25 24.0 RG = 3.3 23 I D = 50A 21 I D VGS = 10V VDS = 30V 23.0 t r - Nanoseconds t r - Nanoseconds VDS = 30V 22 RG = 3.3 23.5 VGS = 10V 24 TJ = 125C 22.5 22.0 21.5 21.0 = 25A 20 TJ = 25C 20.5 20.0 19 25 35 45 55 65 75 85 95 105 115 24 125 26 28 30 32 34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 52 48 TJ = 125C, VGS = 10V t r - Nanoseconds 44 40 I D = 50A, 25A 60 36 40 32 20 0 6 8 10 12 14 16 18 28 I D = 25A 60 26 40 28 24 30 24 23 25 35 45 55 115 20 125 25 40 TJ = 25C 24 30 40 42 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 44 46 48 50 td(off) - - - 200 VDS = 30V t f - Nanoseconds t f - Nanoseconds 105 I D = 25A 100 160 80 120 60 80 I D = 50A 40 40 20 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 50 t d(off) - Nanoseconds 26 38 95 TJ = 125C, VGS = 10V 120 70 VDS = 30V 36 85 240 tf 60 34 75 140 td(off) - - - - 27 32 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 3.3, VGS = 10V 30 50 I D = 50A 25 80 28 50 TJ - Degrees Centigrade tf 26 70 27 20 29 24 48 80 RG = 3.3, VGS = 10V VDS = 30V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125C 46 td(off) - - - - RG - Ohms 28 44 t d(off) - Nanoseconds 100 4 42 90 tf 29 t d(on) - Nanoseconds VDS = 30V 80 40 30 td(on) - - - - t f - Nanoseconds 120 38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 140 tr 36 ID - Amperes IXTA200N055T2 IXTP200N055T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_200N055T2(V5)12-15-08-C