Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"Plus247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"30","Supplier Device Package":"PLUS247\u2122-3","Datasheets":"IXFx32N90P","Rds On (Max) @ Id, Vgs":"300 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"960W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V...