© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 900 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ900 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C32 A
IDM TC= 25°C, Pulse Width Limited by TJM 80 A
IATC= 25°C16 A
EAS TC= 25°C 2 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns
PDTC= 25°C 960 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
IXFK32N90P
IXFX32N90P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS = 900V
ID25 = 32A
RDS(on) < 300mΩΩ
ΩΩ
Ω
DS100387(9/11)
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
PolarTM HiPerFETTM
Power MOSFETs
Features
zLow RDS(on) and QG
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 900 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 300 mΩ
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK32N90P
IXFX32N90P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 13 22 S
Ciss 10.6 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 750 pF
Crss 140 pF
RGi Gate Input Resistance 1.1 Ω
td(on) 48 ns
tr 80 ns
td(off) 68 ns
tf 26 ns
Qg(on) 215 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 nC
Qgd 98 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 1.9 μC
IRM 14 A
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-264 Outline
PLUS247TM Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK32N90P
IXFX32N90P
Fi g . 1. Ou tpu t C har acteri stics @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
012345678
V
DS
- Volt s
I
D
- Amperes
V
GS
= 10V
9V
8
V
7
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
9V
6
V
7
V
8
V
Fi g . 3. Ou tpu t C har ac ter i sti cs @ T
J
= 125º C
0
4
8
12
16
20
24
28
32
0 2 4 6 8 1012141618
V
DS
- Volt s
I
D
- Amper es
6
V
5V
V
GS
= 10V
8V
7
V
Fig. 4. R
DS(on)
Normalized to I
D
= 16A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50-250255075100125150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 10203040506070
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum D r ain C u rr en t vs.
Case Temp er atu r e
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Deg re es Centigrad e
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK32N90P
IXFX32N90P
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.30.40.50.60.70.80.91.01.1
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300
Q
G
- Nan o Coul o mb s
V
GS
- Volt s
V
DS
= 450 V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe Op er ati n g Area
1
10
100
10 100 1,000
V
DS
- V olt s
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit 25µs
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_32N90P(86) 9-27-11
IXFK32N90P
IXFX32N90P
Fi g . 1 3. Maximu m Tran sien t Thermal I mp edan ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fi g. 13 Maximum Transien t Thermal Imp edan ce
sdasd
0.3
