Product Datasheet Search Results:

IXFN132N50P3.pdf5 Pages, 124 KB, Original
IXFN132N50P3
Ixys
MOSFET N-CH 500V 112A SOT227 - IXFN132N50P3
IXFN132N50P3.pdf5 Pages, 124 KB, Original
IXFN132N50P3
Zilog
112 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Ixys.com/IXFN132N50P3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"IXFN Polar3\u2122 HiPerFET\u2122 Series","Product Photos":"SOT-227-4, miniBLOC","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"5V @ 8mA","Series":"HiPerFET\u2122, Polar3\u2122","Standard Package":"10","Supplier Device Package":"SOT-227B","Datasheets":"IXFN132N50P3","Rds On (Max) @ Id, Vgs":"39 mOhm @ 66A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1500W","Package / Case":"SOT-227-...
1722 Bytes - 16:14:27, 18 January 2025
Zilog.com/IXFN132N50P3
{"Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"3000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"112 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0390 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"330 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 ...
1444 Bytes - 16:14:27, 18 January 2025

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