IXFN132N50P3 - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 500 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C 112 A

IDM TC= 25°C, Pulse Width Limited by TJM 330 A

IATC= 25°C 66A

EAS TC= 25°C3J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns

PDTC= 25°C 1500 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS, t = 1minute 2500 V~

IISOL ≤ 1mA, t = 1s 3000 V~

MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 500 V

VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V

IGSS VGS = ±30V, VDS = 0V ±200 nA

IDSS VDS = VDSS, VGS = 0V 50 μA

TJ = 125°C 6 mA

RDS(on) VGS = 10V, ID = 66A, Note 1 39 mΩ

IXFN132N50P3 VDSS = 500V

ID25 = 112A

RDS(on) ≤≤

≤≤

≤ 39mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 250ns

DS100316(03/11)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Advance Technical Information

Polar3TM HiPerFETTM

Power MOSFET

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Features

zInternational Standard Package

zminiBLOC with Aluminum Nitride

Isolation

zAvalanche Rated

zLow Package Inductance

zFast Intrinsic Rectifier

zLow RDS(on) and QG

Advantages

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zUninterrupted Power Supplies

zAC Motor Drives

zHigh Speed Power Switching

Applications

IXFN132N50P3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 66A, Note 1 68 115 S

Ciss 18.6 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1750 pF

Crss 5.0 pF

RGi Gate Input Resistance 1.0 Ω

td(on) 44 ns

tr 9 ns

td(off) 72 ns

tf 8 ns

Qg(on) 250 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 66A 90 nC

Qgd 52 nC

RthJC 0.083 °C/W

RthCS 0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 132 A

ISM Repetitive, Pulse Width Limited by TJM 530 A

VSD IF = 100A, VGS = 0V, Note 1 1.5 V

trr 250 ns

QRM 1.9 μC

IRM 16.4 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 66A

RG = 1Ω (External)

IF = 66A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

IXFN132N50P3

Fi g. 1. Ou tp ut C h ar act er i st i cs @ T

J

= 25ºC

0

20

40

60

80

100

120

140

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5

V

6

V

7

V

Fi g. 2. Extended Ou tput C h ar a cter i sti cs @ T

J

= 25ºC

0

50

100

150

200

250

0 5 10 15 20 25

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

8V

6

V

5

V

7

V

Fi g . 3. Ou tpu t C h ar ac ter i sti cs @ T

J

= 125º C

0

20

40

60

80

100

120

140

02468101214

V

DS

- Volts

I

D

- A mperes

5

V

6V

4V

V

GS

= 10V

8V

7V

Fig. 4. R

DS(on)

No r mali z ed to I

D

= 66A Valu e vs.

Junction T emperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Deg re es Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 132A

I

D

= 66A

Fig. 5. R

DS(on)

Normalized to I

D

= 66A Valu e vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 50 100 150 200 250

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maxi mum Drain Current vs.

Case Temper atu re

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Am peres

IXFN132N50P3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Adm ittance

0

20

40

60

80

100

120

140

160

180

200

3.54.04.55.05.56.06.57.07.5

V

GS

- Volt s

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductan ce

0

20

40

60

80

100

120

140

160

180

200

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- Amp eres

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

50

100

150

200

250

300

350

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

V

SD

- Volts

I

S

- Amperes

T

J

= 12 5ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 50 100 150 200 250

Q

G

- NanoCoulombs

V

GS

- Volt s

V

DS

= 25 0V

I

D

= 66A

I

G

= 10mA

Fig. 11. Capacitance

1

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. F o r war d -B i as Safe Op erati n g Area

1

10

100

1000

10 100 1,000

V

DS

- V olts

I

D

- Am pe res

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

1ms

R

DS(on)

Limit

IXFN132N50P3

IXYS REF: F_132N50P3(K9)03-17-11

Fig. 13. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 13. Maximum Transient Thermal Impedance

AAAAA

0.2