Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 1.5mA","Input Capacitance (Ciss) @ Vds":"1050pF @ 25V","Series":"HiPerFET\u2122","Standard Package":"1","Supplier Device Package":"TO-263 (IXFA)","Datasheets":"IXFx4N100Q","Rds On (Max) @ Id, Vgs":"3 Ohm @ 2A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"150W","Package ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"1000(V)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology...