IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS(on) = 3.0 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient Maximum Ratings ID25 TC = 25C IDM TC = 25C, pulse width limited by TJM IAR EAR 30 V 4 A 16 A TC = 25C 4 A TC = 25C 20 mJ 700 mJ 5 V/ns 150 W -55 to +150 C EAS dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TC = 25C TJ TJM 150 C Tstg -55 to +150 C 300 C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TO-220) Weight 1.13/10 Nm/lb.in. TO-220 TO-263 4 2 g g TO-220 (IXFP) D (TAB) G TO-263 (IXFA) G G = Gate S = Source z z z Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 z z V 4.5 V 100 nA TJ = 25C TJ = 125C 50 1 A mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 3.0 (c) 2003 IXYS All rights reserved 2.5 D (TAB) S D = Drain TAB = Drain Features z Symbol DS IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS98705A(06/03) IXFA 4N100Q IXFP 4N100Q Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 * ID25, pulse test 2.5 S 1.5 1050 pF 120 pF Crss 30 pF td(on) 17 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 ns td(off) RG = 4.7 (External), 32 ns tf 18 ns Qg(on) 39 nC Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 9 nC 22 nC RthJC RthCK 0.8 (TO-220) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 A Repetitive; pulse width limited by TJM 16 A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V 250 ns trr QRM TO-220 (IXFP) Outline Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IF = IS, -di/dt = 100 A/s, VR = 100 V IRM 0.52 C 1.8 A TO-263 (IXFA) Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFA 4N100Q IXFP 4N100Q Figure 1. Output Characteristics at 25OC 6 4 VGS = 10V 9V 8V TJ = 25C 3 TJ = 25C 5 7V 2 ID - Amperes ID - Amperes Figure 2. Extended Output Characteristics at 125OC 6V 1 VGS = 10V 9V 8V 7V 4 3 6V 2 1 5V 5V 0 0 0 2 4 6 8 10 0 4 8 16 20 VCE - Volts VDS - Volts Figure 4. Admittance Curves Figure 3. Output characteristics at 125C 4 4 VGS = 10V 9V 8V 3 3 7V 2 ID - Amperes TJ = 125C ID - Amperes 12 6V 1 O TJ = 125 C 2 TJ = 25OC 1 5V 0 0 5 10 15 0 20 3 4 VDS - Volts 2.2 TJ = 125C 1.8 1.6 1.4 TJ = 25C 1.2 2.0 VGS = 10V ID = 2A 1.8 1.6 1.4 1.2 1.0 1.0 0.8 8 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 7 Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V 2.2 6 VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 5 0 1 2 3 ID - Amperes (c) 2003 IXYS All rights reserved 4 5 6 0.8 25 50 75 100 125 150 TJ - Degrees C DS98705A(06/03) IXFA 4N100Q IXFP 4N100Q Figure 8. Capacitance Curves Figure 7. Gate Charge 2000 15 VGS - Volts Capacitance - pF VDS = 600 V ID = 3 A IG = 10 mA 12 Ciss 1000 9 6 f = 1MHz Coss Crss 100 3 0 10 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Drain Current vs. Case Temperature 5 10 4 8 ID - Amperes ID - Amperes 60 6 TJ = 125OC 4 O TJ = 25 C 2 3 2 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 -50 VSD - Volts -25 0 25 50 75 100 125 150 TC - Degrees Centigrade Figure 11. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343