Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"2.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"TO-261-4, TO-261AA","Gate Charge (Qg) @ Vgs":"14nC @ 10V","Product Photos":"SOT223-3L","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","PCN Design\/Specification":"SOT-223 FET Wire 04\/Jul\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"140 mOhm @ 2A, 10V","Datasheets":"IRLL014NPbF","FET Type":"MOSFET N-C...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"4.9 ns","Typical Turn-Off Delay Time":"14 ns","Description":"Value","Maximum Continuous Drain Current":"2.8 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"5.1 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"140@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"2.9 ns"}...