IRLL014NPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = 1mA
0.14 VGS = 10V, ID = 2.0A
0.20 ΩVGS = 5.0V, ID = 1.2A
0.28 VGS = 4.0V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.3 S VDS = 25V, ID = 1.0A
25 µA VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage -100 VGS = -16V
QgTotal Gate Charge 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge 1.1 1.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 3.0 4.4 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 5.1 VDD = 28V
trRise Time 4.9 ns ID = 2.0A
td(off) Turn-Off Delay Time 14 RG = 6.0Ω
tfFall Time 2.9 RD = 14Ω, See Fig. 10
Ciss Input Capacitance 230 VGS = 0V
Coss Output Capacitance 66 pF VDS = 25V
Crss Reverse Transfer Capacitance 30 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, IAS = 4.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time 41 61 ns TJ = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge 73 110 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
16
1.3
A