Product Datasheet Search Results:
3 Pages, 40 KB, Original- IRL540S
- Bay Linear, Inc.
- 28A 100V power MOSFET
3 Pages, 40 KB, Original- IRL540T
- Bay Linear, Inc.
- 28A 100V power MOSFET
6 Pages, 153 KB, Original- IRL540
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 189 KB, Scan- IRL540AJ69Z
- Fairchild Semiconductor Corporation
- 28 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 1048 KB, Original- IRL540NPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 916 KB, Original- IRL540NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 916 KB, Original- IRL540NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
6 Pages, 167 KB, Scan- IRL540
- International Rectifier
- HEXFET Power MOSFET
1 Pages, 55 KB, Scan- IRL540-001
- International Rectifier
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 55 KB, Scan- IRL540-001PBF
- International Rectifier
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 68 KB, Scan- IRL540-002
- International Rectifier
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fairchildsemi.com/IRL540A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRL540A TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"58 mOhm @ 14A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"121W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"100V","Curre...
1641 Bytes - 02:34:30, 29 October 2024
Fairchildsemi.com/IRL540AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"98 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"522 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"28 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...
1493 Bytes - 02:34:30, 29 October 2024
Infineon.com/IRL540NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"36(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1520 Bytes - 02:34:30, 29 October 2024
Infineon.com/IRL540NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"36(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1507 Bytes - 02:34:30, 29 October 2024
Infineon.com/IRL540NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"36(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-001
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"110 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"28 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packa...
1394 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-001PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1472 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-002
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"440 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1448 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"440 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET T...
1523 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-003
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"440 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1446 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"440 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technol...
1516 Bytes - 02:34:30, 29 October 2024
Irf.com/IRL540-004
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"440 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1446 Bytes - 02:34:30, 29 October 2024
