Product Datasheet Search Results:

IRL1104S.pdf11 Pages, 144 KB, Original
IRL1104S
International Rectifier
MOSFET N-CH 40V 104A D2PAK - IRL1104S
IRL1104SPBF.pdf11 Pages, 229 KB, Original
IRL1104SPBF
International Rectifier
MOSFET N-CH 40V 104A D2PAK - IRL1104SPBF
IRL1104STRL.pdf11 Pages, 128 KB, Original
IRL1104STRL
International Rectifier
MOSFET N-CH 40V 104A D2PAK - IRL1104STRL
IRL1104STRLPBF.pdf11 Pages, 229 KB, Original
IRL1104STRLPBF
International Rectifier
MOSFET N-CH 40V 104A D2PAK - IRL1104STRLPBF
IRL1104STRR.pdf11 Pages, 128 KB, Original
IRL1104STRR
International Rectifier
MOSFET N-CH 40V 104A D2PAK - IRL1104STRR
IRL1104STRRPBF.pdf11 Pages, 229 KB, Original
IRL1104STRRPBF
International Rectifier
104 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/IRL1104S
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3445pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1104S/L","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":...
1673 Bytes - 17:37:40, 27 November 2024
Irf.com/IRL1104SPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3445pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1104(S,L)PbF","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - ...
1705 Bytes - 17:37:40, 27 November 2024
Irf.com/IRL1104STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1104S/L","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.4W","Package / Case":"TO-263-3, ...
1686 Bytes - 17:37:40, 27 November 2024
Irf.com/IRL1104STRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1104(S,L)PbF","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.4W","Package / Case":"TO-26...
1713 Bytes - 17:37:40, 27 November 2024
Irf.com/IRL1104STRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1104S/L","Rds On (Max) @ Id, Vgs":"8 mOhm @ 62A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.4W","Package / Case":"TO-263-3, ...
1686 Bytes - 17:37:40, 27 November 2024
Irf.com/IRL1104STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"340 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"104 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-...
1652 Bytes - 17:37:40, 27 November 2024

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