Product Datasheet Search Results:
- IRFSL3507
- International Rectifier
- MOSFET N-CH 75V 97A TO-262 - IRFSL3507
- IRFSL3507PBF
- International Rectifier
- 75 A, 75 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRFSL3507
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Input Capacitance (Ciss) @ Vds":"3540pF @ 50V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Datasheets":"IRFB3507, IRFS(L)3507","Rds On (Max) @ Id, Vgs":"8.8 mOhm @ 58A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"190W","Package / Case":"TO-262-3 Long Leads, I\u00b2Pa...
1567 Bytes - 21:11:27, 16 January 2025
Irf.com/IRFSL3507PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0088 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-C...
1587 Bytes - 21:11:27, 16 January 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRFSL3507.pdf | 0.35 | 1 | Request |