IRFB/S/SL3507PbF
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.17mH,
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
e 75 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.070 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 7.0 8.8 mΩ
VGS(th) Gate Threshold Volta
e 2.0 ––– 4.0 V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
RGGate Input Resistance ––– 1.3 ––– Ωf = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
fs Forward Transconductance 86 ––– ––– S
QgTotal Gate Char
e ––– 88 130 nC
Qgs Gate-to-Source Char
e ––– 24 –––
Qgd Gate-to-Drain ("Miller") Char
e ––– 36 –––
td(on) Turn-On Delay Time ––– 20 ––– ns
trRise Time ––– 81 –––
td(off) Turn-Off Delay Time ––– 52 –––
tfFall Time ––– 49 –––
Ciss Input Capacitance ––– 3540 ––– pF
Coss Output Capacitance ––– 340 –––
Crss Reverse Transfer Capacitance ––– 210 –––
Coss eff. (ER) Effective Output Capacitance (Ener
y Related) ––– 460 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
––– 520 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 97
c
A
(Body Diode)
ISM Pulsed Source Current ––– ––– 390 A
(Body Diode)
d
VSD Diode Forward Volta
e ––– ––– 1.3 V
trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C VR = 64V,
––– 45 68 TJ = 125°C IF = 58A
Qrr Reverse Recovery Char
e ––– 32 48 nC TJ = 25°C di
dt = 100A
µs
––– 51 77 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.7 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 58A
ID = 58A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 60V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
i
, See Fig.11
VGS = 0V, VDS = 0V to 60V
h
, See Fig. 5
TJ = 25°C, IS = 58A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
d
VGS = 10V, ID = 58A
g
VDS = VGS, ID = 100µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
ID = 58A
RG = 5.6Ω
VGS = 10V
g
VDD = 48V