Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"40(W)","Continuous Drain Current":"6.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRFR9120NTRPBF Saber Model IRFR9120NTRPBF Spice Model","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRFR/U9120N","Rds On (Max) @ Id, Vgs":"480 mOhm @ 3.9A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"40W","Package / Case":"TO...

{"Voltage, Breakdown, Drain to Source":"-100 V","Time, Turn-Off Delay":"28 ns","Transconductance, Forward":"1.4 S","Gate Charge, Total":"27 nC","Voltage, Forward, Diode":"-1.6 V","Polarization":"P-Channel","Current, Drain":"-6.6 A","Package Type":"D-Pak (TO-252AA)","Voltage, Gate to Source":"\u00b120 V","Temperature, Operating, Minimum":"-55 \u00b0C","Power Dissipation":"40 W","Temperature, Operating, Maximum":"+150 \u00b0C","Resistance, Drain to Source On":"0.48 Ohm","Time, Turn-On Delay":"14 ns"}...