Product Datasheet Search Results:

IRFG5110.pdf12 Pages, 393 KB, Original
IRFG5110
International Rectifier
1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
IRFG5110(N).pdf12 Pages, 393 KB, Original
IRFG5110(N)
International Rectifier
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
IRFG5110(P).pdf12 Pages, 393 KB, Original
IRFG5110(P)
International Rectifier
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
IRFG5110PBF.pdf12 Pages, 393 KB, Original
IRFG5110PBF
International Rectifier
1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
IRFG5110SCV.pdf12 Pages, 393 KB, Original
IRFG5110SCV
International Rectifier
Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB
IRFG5110SCX.pdf12 Pages, 393 KB, Original
IRFG5110SCX
International Rectifier
Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB
IRFG5110NCHAN.pdf1 Pages, 38 KB, Original
IRFG5110NCHAN
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRFG5110PCHAN.pdf1 Pages, 38 KB, Original
IRFG5110PCHAN
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Irf.com/IRFG5110
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel T...
1573 Bytes - 22:08:48, 22 November 2024
Irf.com/IRFG5110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER",...
1643 Bytes - 22:08:48, 22 November 2024
Irf.com/IRFG5110SCV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"25(Max)@N Channel|60(Max)@P Channel ns","Typical Turn-Off Delay Time":"40(Max)@N Channel|60(Max)@P Channel ns","Description":"Value","Maximum Continuous Drain Current":"1 A","Package":"14MO-036AB","Typical Turn-On Delay Time":"20(Max)@N Channel|30(Max)@P Channel ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C",...
1469 Bytes - 22:08:48, 22 November 2024
Irf.com/IRFG5110SCX
{"Category":"MOSFET","RDS-on":"0.7@10V@N Channel|0.7@-10V@P Channel Ohm","Description":"Value","Manufacturer":"International Rectifier"}...
1027 Bytes - 22:08:48, 22 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
DCR5110M34.pdf0.781Request
8185110.pdf0.131Request
8065110.pdf0.101Request
8085110.pdf0.181Request
1145110.pdf0.251Request
VFS5110-3DZ-04T.pdf15.061Request
VFS5110-3D.pdf15.061Request
PA5110-N04-N.pdf2.901Request
PA5110-04-N.pdf2.901Request
56-PA5110-F04.pdf0.151Request
PA5110-T04-N.pdf2.901Request
VFS5110-4E.pdf15.061Request