Product Datasheet Search Results:
12 Pages, 393 KB, Original- IRFG5110
- International Rectifier
- 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
12 Pages, 393 KB, Original- IRFG5110(N)
- International Rectifier
- 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
12 Pages, 393 KB, Original- IRFG5110(P)
- International Rectifier
- -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
12 Pages, 393 KB, Original- IRFG5110PBF
- International Rectifier
- 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
12 Pages, 393 KB, Original- IRFG5110SCV
- International Rectifier
- Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB
12 Pages, 393 KB, Original- IRFG5110SCX
- International Rectifier
- Trans MOSFET N/P-CH 100V 1A 14-Pin MO-036AB
1 Pages, 38 KB, Original- IRFG5110NCHAN
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
1 Pages, 38 KB, Original- IRFG5110PCHAN
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
Product Details Search Results:
Irf.com/IRFG5110
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel T...
1573 Bytes - 09:10:48, 23 December 2024
Irf.com/IRFG5110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER",...
1643 Bytes - 09:10:48, 23 December 2024
Irf.com/IRFG5110SCV
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"25(Max)@N Channel|60(Max)@P Channel ns","Typical Turn-Off Delay Time":"40(Max)@N Channel|60(Max)@P Channel ns","Description":"Value","Maximum Continuous Drain Current":"1 A","Package":"14MO-036AB","Typical Turn-On Delay Time":"20(Max)@N Channel|30(Max)@P Channel ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C",...
1469 Bytes - 09:10:48, 23 December 2024
Irf.com/IRFG5110SCX
{"Category":"MOSFET","RDS-on":"0.7@10V@N Channel|0.7@-10V@P Channel Ohm","Description":"Value","Manufacturer":"International Rectifier"}...
1027 Bytes - 09:10:48, 23 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DCR5110M34.pdf | 0.78 | 1 | Request | |
| 8185110.pdf | 0.13 | 1 | Request | |
| 8065110.pdf | 0.10 | 1 | Request | |
| 8085110.pdf | 0.18 | 1 | Request | |
| 1145110.pdf | 0.25 | 1 | Request | |
| X-251104-R.pdf | 0.76 | 1 | Request | |
| SP-151101.pdf | 0.12 | 1 | Request | |
| X-251109-R.pdf | 0.76 | 1 | Request | |
| X-251100-R.pdf | 0.76 | 1 | Request | |
| SP-151102.pdf | 0.12 | 1 | Request | |
| SP-151105.pdf | 0.12 | 1 | Request | |
| X-251101-R.pdf | 0.76 | 1 | Request |
