Absolute Maximum Ratings (Per Die)
Parameter N-Channel P-Channel Units
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current 1.0 -1.0
ID @ VGS =± 10V, T C = 100°C Continuous Drain Current 0.6 -0.6
IDM Pulsed Drain Current ➀4.0 -4.0
PD @ TC = 25°C Max. Power Dissipation 1.4 1.4 W
Linear Derating Factor 0.011 0.011 W/°C
VGS Gate-to-Source Voltage ±20 ±20 V
EAS Single Pulse Avalanche Energy 75 ➁ 75 ➄ mJ
IAR Avalanche Current ➀——A
EAR Repetitive Avalanche Energy ➀——mJ
dv/dt Peak Diode Recovery dv/dt 5.5 ➂ -5.5 ➅V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
oC
A
04/16/02
www.irf.com 1
Product Summary
Part Number RDS(on) ID CHANNEL
IRFG5110 0.7Ω 1.0A N
IRFG5110 0.7Ω -1.0A P
For footnotes refer to the last page
MO-036AB
PD - 90437D
IRFG5110
100V, Combination 2N-2P-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
HEXFET® MOSFET technology is the key to International
Rectifier’ s advanced line of pow er MOSFET transistors . The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability . The y are well-suited f or applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nDynamic dv/dt Rating
nLight-weight
IRFG5110
2www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 1.0
ISM Pulse Source Current (Body Diode) ➀— — 4.0
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.0A, VGS = 0V ➃
trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 0.83 nC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.7 VGS = 10V, ID = 0.6A
Resistance — — 0.8 VGS = 10V, ID = 1.0A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.86 — S ( )V
DS > 15V, IDS = 0.6A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V, VGS= 0V
— — 250 VDS = 80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 15 VGS =10V, ID = 1.0A,
Qgs Gate-to-Source Charge — — 7.5 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 7.5
td(on) Turn-On Delay Time — — 20 VDD = 50V, ID = 1.0A,
trRise Time — — 25 VGS =10V, RG = 24Ω
td(off) Turn-Off Delay Time — — 40
tfFall Time — — 40
LS + LDTotal Inductance — 10 —
Ciss Input Capacitance — 180 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 82 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 15 —
nA
Ω
➃
nH
ns
µA
Ω
Thermal Resistance (Per Die)
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 17
RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
—
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
www.irf.com 3
IRFG5110
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -1.0
ISM Pulse Source Current (Body Diode) ➀— — -4.0
VSD Diode Forward Voltage — — -5.5 V Tj = 25°C, IS = -1.0A, VGS = 0V ➃
trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = -1.0A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 0.66 nC VDD ≤ -50V
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A
Thermal Resistance (Per Die)
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 17
RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.7 VGS = -10V, ID = -0.6A
Resistance — — 0.8 VGS = -10V, ID =- 1.0A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 1.1 — — S ( )V
DS > -15V, IDS = -0.6A ➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS= 0V
— — -250 VDS = -80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = - 20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 22 VGS = -10V, ID = -1.0A,
Qgs Gate-to-Source Charge — — 8.0 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 14
td(on) Turn-On Delay Time — — 30 VDD = -50V, ID = -1.0A,
trRise Time — — 60 VGS = -10V, RG = 24Ω
td(off) Turn-Off Delay Time — — 60
tfFall Time — — 60
LS + LDTotal Inductance — 10 — .
Ciss Input Capacitance — 390 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 170 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 45 —
nA
Ω
➃
nH
ns
µA
Ω
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
IRFG5110
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
N-Channel
Q1,Q3
www.irf.com 5
IRFG5110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
N-Channel
Q1,Q3
13a & b
IRFG5110
6www.irf.com
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
N-Channel
Q1,Q3
-10V
www.irf.com 7
IRFG5110
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
N-Channel
Q1,Q3
.
10V
10V
10V
IRFG5110
8www.irf.com
Fig 17. Normalized On-Resistance
Vs. Temperature
Fig 15. Typical Output Characteristics
Fig 14. Typical Output Characteristics
Fig 16. Typical Transfer Characteristics
P-Channel
Q2,Q4
www.irf.com 9
IRFG5110
Fig 21. Maximum Safe Operating
Area
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 18. Typical Capacitance
Vs.
Drain-to-Source Voltage
Fig20. Typical Source-Drain Diode
Forward Voltage
P-Channel
Q2,Q4
26a & b
IRFG5110
10 www.irf.com
Fig 24. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 22. Maximum Drain Current Vs.
Case Temperature
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
P-Channel
Q2,Q4
-10V
www.irf.com 11
IRFG5110
Fig 25c. Maximum Avalanche Energy
Vs. Drain Current
Fig 25b. Unclamped Inductive Waveforms
Fig 25a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER A
15V
-20V
Fig 26b. Gate Charge Test Circuit
Fig 26a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
P-Channel
Q2,Q4
.
-10V
IRFG5110
12 www.irf.com
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ VDD = - 25V, star ting TJ = 25°C, L= 150mH,
Peak IL = - 1.0A, VGS = -10V
➅ ISD ≤ - 1.0A, di/dt ≤ - 110A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 150mH,
Peak IL = 1.0A, VGS = 10V
➂ ISD ≤ 1.0A, di/dt ≤ 75A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Case Outline and Dimensions — MO-036AB
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice.04/02
