Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER",...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"25(Max)@N Channel|60(Max)@P Channel ns","Typical Turn-Off Delay Time":"40(Max)@N Channel|60(Max)@P Channel ns","Description":"Value","Maximum Continuous Drain Current":"1 A","Package":"14MO-036AB","Typical Turn-On Delay Time":"20(Max)@N Channel|30(Max)@P Channel ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C",...

{"Category":"MOSFET","RDS-on":"0.7@10V@N Channel|0.7@-10V@P Channel Ohm","Description":"Value","Manufacturer":"International Rectifier"}...