Product Datasheet Search Results:

IRFD210.pdf19 Pages, 625 KB, Original
IRFD210
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRFD210.pdf2 Pages, 121 KB, Scan
IRFD210
General Electric
Power Transistor Data Book 1985
IRFD210.pdf5 Pages, 175 KB, Scan
IRFD210
Harris Semiconductor
Power MOSFET Data Book 1990
IRFD210R.pdf5 Pages, 171 KB, Scan
IRFD210R
Harris Semiconductor
Power MOSFET Data Book 1990
IRFD210.pdf6 Pages, 53 KB, Original
IRFD210
Intersil Corporation
0.6A, 200V, 1.500 ?, N-Channel Power MOSFET
IRFD210.pdf1 Pages, 104 KB, Scan
IRFD210PBF.pdf6 Pages, 173 KB, Scan
IRFD210PBF
International Rectifier
200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
IRFD210R.pdf1 Pages, 41 KB, Original
IRFD210R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRFD210.pdf2 Pages, 119 KB, Scan
IRFD210
N/a
FET Data Book
IRFD210R.pdf1 Pages, 85 KB, Scan
IRFD210R
N/a
Shortform Datasheet & Cross References Data
IRFD210.pdf67 Pages, 163 KB, Original
IRFD210
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Irf.com/IRFD210PBF
{"Status":"DISCONTINUED","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, DIP-4","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"1.5 ohm","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type"...
1400 Bytes - 10:40:25, 23 December 2024
Siliconix_vishay/IRFD210PBF
795 Bytes - 10:40:25, 23 December 2024
Various/IRFD210R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"200","g(fs) Max, (S) Trans. conduct,":"0.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"15n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"2.5","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"300m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250var...
1268 Bytes - 10:40:25, 23 December 2024
Vishay.com/IRFD210
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"4-DIP","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"140pF @ 25V","Series":"-","Standard Package":"2,500","Supplier Device Package":"4-DIP, Hexdip, HVMDIP","Datasheets":"IRFD210","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 360mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1W","Package / Case":"4-DIP (0.300\", 7.62mm)","Mounting Type":"Thr...
1513 Bytes - 10:40:25, 23 December 2024
Vishay.com/IRFD210PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"600mA (Ta)","Gate Charge (Qg) @ Vgs":"8.2nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 360mA, 10V","Datasheets":"IRFD210","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vd...
1757 Bytes - 10:40:25, 23 December 2024
Vishay_pcs/IRFD210PBF
{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"0.6 A","Width":"5 mm","Maximum Drain Source Voltage":"200 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.2 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"8.2 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"140 pF @ 25 V","Length":"...
1925 Bytes - 10:40:25, 23 December 2024

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