Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V fps(On) = 1.5N and 2.40 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFD210R, IRFD211R, IRFD212R and IRFD213R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFD-types are supplied in the 4-Pin dual-in-line plas- tic package. Absolute Maximum Ratings N-CHANNEL ENHANCEMENT MODE o 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION IL {| s [ ]@ TOP VIEW 4-PIN DIP Rugged Power MOSFETs File Number 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Parameter IRFD210R | IRFD211R | IRFD212R | IRFD213R Units Vos Drain - Source Voltage 200 150 200 150 Vv Voar Drain - Gate Voltage (Ras = 20 KQ) @ 200 150 200 150 v lo @ Te = 25C Continuous Drain Current 0.6 0.6 0.45 0.45 A tom Pulsed Drain Current 2.5 2.5 1.8 1.8 A Ves Gate - Source Voltage +20 v Po @ Tc = 25C Max. Power Dissipation 1.0 (See Fig. 13) Ww Linear Derating Factor 0.008 (See Fig. 13) w/C Eas Single Pulse Avalanche Energy Rating @ 30 mj te Sperating Junto ange 55 0160 *c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-189Rugged Power MOSFETs IRFD210R, IRFD211R, IRFD212R, IRFD213R Electrical Characteristics @ T- = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage | IRFD210R = iAFD2i2R| 200 | | V__| Vos=0v IRFO211R _ waro2ian| 8 (| | ~ | V {| l= 250uA Vesim Gate Threshold Voltage ALL 2.0 = 4.0 v Vos = Ves, Ip = 2504 A loss Gate-Source Leakage Forward ALL = = 500 nA Vas = 20V lass Gate-Source Leakage Reverse ALL = ~ -500 nA Ves = -20V loss Zero Gate Voltage Drain Current = - 250 BA Vos = Max. Rating, Ves = OV ALL _[|. | 1000 | pA | Vos = Max. Rating x 0.8, Ves = OV, Tc = 125C loom On-State Drain Current @ IRFO210R | gg _ _ A REDS : Vos > Iniom X Rostom max. Ves = 10V WRED212R _ _ IRFO2T3AR| 0-45 A Rostem Static Orain-Source On-State (RFD210R; 1.0 15 o Resistance @ ee Vas = 10V, Ip =0.3A inFo2i3a| | 1 | 24 | 9 | Dts Forward Transconductance ALL 0.5 0.8 =__|_S@) | Vos > toro x Rostonimax: to = 0.6A Sey___tnput Capacitance AL f=} 135 |__| BF 1 Vos = OV, Vos = 25V, f= 1.0 MHz Com __Output Capacitance ALL = 60 = PE__| see Fig. 9 Cras Reverse Transfer Capacitance ALL _- 16 _ pF Laion Turn-On Delay Time ALL _ 8.0 15 ns Vpo * 0.5BVoss, lo = 0.3A, Zo = 502 t Rise Time ALL = 15 25 ns See Fig. 16 ta Turn-Ott Delay Time ALL 10 15 ns (MOSFET switching times are essentially - Fall Time ALL _ 8.0 5 ns independent of operating temperature.) Q. Totai Gate Charge ALL _ 5.0 75 nc Ves = 10V, lo = 2.5A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) . : See Fig. 17 for test circuit. (Gate charge is Qa Gate-Source Charge ALL 20 nc essentially independent of operating a. a ature.) Qos Gate-Drain (Miller) Charge ALL - 3.0 = nc " Lo internat Drain Inductance ALL _ 40 - nH Measured from the Moditied MOSFET drain lead, 2.0 mm symbol showing the (0.08 in.) from package | internal device ,, to center of die. inductances Lo Ls internal Source inductance ALL _- 6.0 _ nH Measured from the source !ead, 2.0 mm 6 (0.08 in.) from : us package to source s bonding pad. arcs atees Thermal Resistance [ ReJA Junction-to-Ambient { au | | 120 | c/w | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFD210R; _ 06 A Modified MOSFET symbol (Body Diode) IFIFD211R . showing the integral 2 IRFD212R A reverse P-N junction rectifier. IRFO21I3R| ~ | | 2-45 Ina Pulse Source Current IRFD210R | _ 28 A . (Body Diode) IRIFD211R " IRFD212R orca azene inFo2ign| | ~ | 18 | A Vso _ Diode Forward Voltage @ IRFD210R _ _ 20 v__ | Te=25C, Is = 0.6A, Ves = OV pay; | | 18 | v_ | Te=25C, t= 0.45A, Vas = OV ter Reverse Ri y Time ALL - 290 = ns Ts = 150C, le = 0.6A, dle/dt = 100A/us_ [ Onn Reverse Recovered Charge ALL = 2.0 = uC T, = 150C, le = 0.6A, dle/dt = 100A/us_ ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lp. @ T, = 25C to 150C. @ Pulse Test: Pulse width < 300s, Duty Cycle < 2%. @ Von = 20V, starting T; = 25C, L = 112.7mH, Rigs = 502, Ipeax = 2.2A. See figs. 15, 16. 6-190Rugged Power MOSFETs a = = 2 = zc 3 Zz < < a s 0 10 2 30 40 50 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Cutput Characteristics 5.0 ao 3 = 2 =z <= 30 pa a =z oc 3 Zz 20 < ec a Ss 0 10 2.0 30 40 5.0 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics + > lnton) * Roston} Ms. TRANSCONDUCTANCE (SIEMENS) o 10 20 30 40 $0 ip, ORAIN CURRENT (AMPERES) Fig. 5 Typical Transconductance Vs. Drain Current IRFD210R, IRFO211R, IRFD212R, IRFD213R $0 ye \ ry Wea a Ty = -669C ee 5 = 30 Wns , - z Vos > 'o(on) * Aos{on) max. = 2 o z 20 < = oa a 10 0 0 2 6 a 10 Vos, GATE-TO-SOURCE VOLTAGE {VOLTS} Fig. 2 Typical Transfer Characteristics 3 2 10 Os 3 < $ 0.2 s - 0 2 @ = 0.05 => Qo =z = 002 5 a 00 0.002 0.001 1002 5 10 20 50 100 200 500 ing: ORAIN-TO-SOURCE VOLTAGE {VOLTS) Fig. 4 Maximum Safe Operating Area Ty= 150C y= 259C Ipp. REVERSE DRAIN CURRENT (AMPERES) 0 1.0 20 30 40 50 Vgo, SOUACE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Source-Drain Diode Forward Voltage 6-191Rugged Power MOSFETs IRFD210R, IRFD211R, IRF D212R, IRFD213R 1.25 1.15 2 2 o 0.85 BV pss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE {NORMALIZEO) Ros(on). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.75 -40 a 49 80 120 160 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 7 Breakdown Voltage Vs. Temperature Fig. 8 Normatized On-Resistance Vs. Temperature Vos=0 'F 1 Miz Cigg = Cog + Cog, Cas SHORTED Copy = Cog Con Cog Cogs = Cos + =e oe Coa a Cast Cog os = Vps = 160V, IRFO210R, C, CAPACITANCE (pF) Vgs. GATE-TO SOURCE VOLTAGE (VOLTS) Ip =25A FOR TEST CIRCUIT SEE FIGURE 17 0 0 20 30 40 50 0 2 4 6 8 1a Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Fig. 9 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 10 Typical Gate Charge Vs. Gate-to-Source Voltage Fipsion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C, (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) 06 IRFD210A, 212K a = =x 2 w 8 2 < 5 = NO 8 g = = # 04 PJ _ a = M NQ w = 3 C = 2 >< N 3 2 03 J N o = IAFD211R, 2137 IN 2 3 z z < @ 02 a a 5 . \\ im 2 at N \ 0 0 2 4 6 8 10 25 50 Ty 100 128 150 Ip. ORAIN CURRENT (AMPERES) Ta. AMBIENT TEMPERATURE (C) Fig. 11 Typical On-Resistance Vs. Drain Current Fig. 12 Maximum Drain Current Vs. Case Temperature 6-192Rugged Power MOSFETs Pp. POWER DISSIPATION (WATTS) < 120 KW 0 20 40 60 8t 100 120 140 Ta, AMBIENT TEMPERATURE (C) Fig. 13 Power Vs. Temperature Derating Curve ADJUST AL VOD TO OBTAIN SPECIFIED Ip 3 Ry v; PULSE GENERATOR > TO SCOPE Joon HIGH FREQUENCY SHUNT Fig. 16 Switching Time Test Circuit IRFD210R, IRFD211R, IRFD212R, IRFD213R Vos VARY tp TO OBTAIN REQUIRED PEAK tc = Yoo Vggtt0V i Fie] 920S- 42659 ~ Fig. 14 Unciamped Energy Test Circult 92CS- 42660 Fig. 15 Unclamped Energy Waveforms Vos CURRENT (ISOLATED REGULATOR SUPPLY) SAME TYPE av T audut AS DUT BATTERY | | 1.5mA 0 -He 2 -Vos CURRENT > CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 17 Gate Charge Test Circuit 6-193