Product Datasheet Search Results:
- IRFD110
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
- IRFD110
- General Electric
- Power Transistor Data Book 1985
- IRFD110
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRFD110R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRFD110
- Intersil Corporation
- 1A, 100V, 0.600 ?, N-Channel Power MOSFET
- IRFD110
- International Rectifier
- N-Channel Power MOSFETs
- IRFD110PBF
- International Rectifier
- HEXFET Power MOSFET
- IRFD110R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Siliconix_vishay/IRFD110PBF
804 Bytes - 07:35:35, 23 December 2024
Various/IRFD110R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"1.2","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"25n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"800m","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"800m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250v...
1268 Bytes - 07:35:35, 23 December 2024
Vishay.com/IRFD110
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Ta)","Gate Charge (Qg) @ Vgs":"8.3nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"540 mOhm @ 600mA, 10V","Datasheets":"IRFD110","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vdss)":"100V","PCN Obsolescence/ EOL":"SIL-018-2015-Rev-0 20/May/2015",...
1744 Bytes - 07:35:35, 23 December 2024
Vishay.com/IRFD110PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Ta)","Gate Charge (Qg) @ Vgs":"8.3nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"540 mOhm @ 600mA, 10V","Datasheets":"IRFD110","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"100","Drain to Source Voltage (Vdss)"...
1753 Bytes - 07:35:35, 23 December 2024
Vishay_pcs/IRFD110PBF
{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"1 A","Width":"5 mm","Maximum Drain Source Voltage":"100 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.3 nC @ 10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"6.9 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"180 pF @ 25 V","Length":"6....
1929 Bytes - 07:35:35, 23 December 2024