Product Datasheet Search Results:

IRFBE20.pdf6 Pages, 171 KB, Scan
IRFBE20
International Rectifier
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
IRFBE20PBF.pdf8 Pages, 248 KB, Original
IRFBE20.pdf1 Pages, 105 KB, Scan
IRFBE20
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
IRFBE20.pdf67 Pages, 163 KB, Original
IRFBE20
Toshiba
Power MOSFETs Cross Reference Guide
IRFBE20.pdf9 Pages, 1076 KB, Original
IRFBE20
Vishay [siliconix]
MOSFET N-CH 800V 1.8A TO-220AB - IRFBE20
IRFBE20-001.pdf1 Pages, 41 KB, Scan
IRFBE20-001
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFBE20-001PBF.pdf1 Pages, 41 KB, Scan
IRFBE20-001PBF
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFBE20-002.pdf1 Pages, 35 KB, Scan
IRFBE20-002
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBE20-002PBF.pdf1 Pages, 35 KB, Scan
IRFBE20-002PBF
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBE20-004.pdf1 Pages, 35 KB, Scan
IRFBE20-004
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBE20-004PBF.pdf1 Pages, 35 KB, Scan
IRFBE20-004PBF
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBE20-005.pdf1 Pages, 35 KB, Scan
IRFBE20-005
Vishay Presicion Group
1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Vishay.com/IRFBE20
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"530pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRFBE20 Packaging Information","Rds On (Max) @ Id, Vgs":"6.5 Ohm @ 1.1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"54W","Package / Case":"TO-220-3","Mounting Type":"Throug...
1608 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"7.2 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuratio...
1361 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1423 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...
1455 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1519 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-004
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...
1455 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-004PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1517 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-005
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...
1457 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-005PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1517 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-006
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...
1455 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-006PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1519 Bytes - 19:06:27, 20 December 2024
Vishay.com/IRFBE20-007
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1330 Bytes - 19:06:27, 20 December 2024

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