PD-9.610A IRFBE20 Intemational Rectifier HEXFET Power MOSFET @ Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching Ease of Paralleling Simple Drive Requirements Voss = 800V Rpsion) = 6.50 5 Ip = 1.8A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for alt commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings TO-220AB | Parameter Max. Units In @ To = 25C Continuous Drain Current, Ves @ 10 V 18 Ip @ Tc= 100C | Continuous Drain Current, Vas @ 10 V 12 A lpm Pulsed Drain Current 7.2 Pp @ Te = 25C _| Power Dissipation 54 WwW Linear Derating Factor 0.43 wre Vas Gate-to-Source Voltage +20 v Eas Single Pulse Avalanche Energy @ 180 mJ | lar Avalanche Current_ 1.8 A | Ear Repetitive Avalanche Energy 5.4 mJ | dv/dt Peak Diode Recovery dv/dt 2.0 Vins Ty Operating Junction and -55 to +150 Tste Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) [ Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Resc Junction-to-Case _ _ 2.3 Recs Case-to-Sink, Flat, Greased Surface _ 0.50 _ C Resa Junction-to-Ambient _ 62 449IRFBE20 | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vipripss Drain-to-Source Breakdown Voltage g00 | = V__|Vas=0V, lo= 250nA AV erypss/ATy| Breakdown Voltage Temp. Coefficient | 0.98 | | V/C | Reference to 25C, Ib= 1mA Rog(eny Static Drain-to-Source On-Resistance _ _ 6.5 Q | Ves=10V, Ip=1.1A @ Vasith) Gate Threshold Voltage 2.0 _ 4.0 V_| Vos=Ves, In= 250nA Os Forward Transconductance 0.80 | _ S__|Vos=100V, In=1.1A @ Inss Drain-to-Source Leakage Current 100 HA Vos=800V, Vas-OV | 500 Vps=640V, Ves=0V, Ty=125C lass Gate-to-Source Forward Leakage _ | 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge _ _ 38 Ip=1.8A Qas Gate-to-Source Charge 5.0 nC | Vps=400V Qoa Gate-to-Drain ("Miller") Charge _ = 21 Vas=10V See Fig. 6 and 13 @ tayon) Turn-On Delay Time _ 8.2 = Vpp=400V tr Rise Time _ 17 _ ns Ip=1.8A tavott) Turn-Off Delay Time > 58 _ Re=18Q tr Fall Time _ 27 _- Rp=230Q See Figure 10 @ Lo Internal Drain Inductance _ 45 - 2 TIO ped ) = nH | from package (i | Ls Internal Source Inductance | 75) and center of die contact 8 Ciss Input Capacitance 530 Vas=0V Coss Output Capacitance | 150|/ PF | Vpg=25V | Crss Reverse Transfer Capacitance _ 90 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 18 MOSFET symbol o (Body Diode) , A showing the Ism Pulsed Source Current | | 72 integral reverse (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage _ 1.4 Vs | Ty=25C, Is=1.8A, Vas=0V @ ter Reverse Recovery Time _ 380 | 570 ns | Ty=25C, Ir=1.8A On Reverse Recovery Charge | 0.94] 1.4 | nC | di/dt=100A/Is @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; pulse width limited by Isps.8A, di/dt<80A/us, Vop<600 , max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Tj=25C, L=104mH Pulse width < 300 ps; duty cycle <2%. Re=25Q, las=1.8A (See Figure 12) 450Ip, Drain Current (Amps) Ip, Drain Current (Amps) 190 4974 4.5V 20us PULSE WIDTH To = 25C UE 102 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C 109 150C Vog = 100V 20us PULSE WIDTH 4 6 7 8 10 Vas, Gate-to-Source Voltage (volts) Rps(on): Drain-to-Source On Resistance Fig 3. Typical Transfer Characteristics \p, Drain Current (Amps) (Normalized) IRFBE20 20us PULSE WIOTH To = 150C 100 404 102 Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150C V6s = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 440 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 451IRFBE20 | Capacitance (pF) Isp, Reverse Drain Current (Amps) 1400 20 = 1MHz Cgg + Coq Cas 4200 Cga o a nD 400 Ves, Gate-to-Source Voltage (volts) SEE FIGURE 13 101 10 20 30 40 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 102 OPERATION IN THIS AREA LIMITED Y Ags (ON) g E << to < 409 o 5 3) & & 5 Ty=1509C 4 Ves = OV SINGLE wy : . : . 0 oan 2 58 19 2 5 1492 2 S 493 2 5 404 Vsp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 452Ip, Drain Current (Amps) 2.0 ro a bs to o @ B 0.0 25 Fig 9. IRFBE20 Vos > WA D.U.T. A s+ 7 - Vo Pulse Width < ips Duty Factor < 0.1% L Vos 90% 10% 50 75 100 125 150 Ves Tc, Case Temperature (C) tdjon) tavor) tf Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 rs Thermal Response (Zgjc) SINGLE PULSE Pod (THERMAL RESPONSE) fee al NOTES: 4. DUTY FACTOR, O=t1/t2 2. PEAK T)=Ppm x Ztnje * Te 40 4075 10-4 103 10? 0.4 4 40 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal! Impedance, Junction-to-Case 453IRFBE20 Vary tp to obtain Vps> required las Ip TOP -80A 1.44 BOTTOM 1.84 0.012 Eas, Single Pulse Energy (mJ) = 50V Vos 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) lag en Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Q 10Ve _=G ae Oe MISES SS SSS | k- Qas Qep Ves Va ama EJ. Charge > Ia = Ib Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information See page 1516 International Appendix E: Optional Leadforms See page 1525 Rectifier 454