Product Datasheet Search Results:
6 Pages, 142 KB, Scan- IRF831
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 4.5 A, 450V/500V
4 Pages, 200 KB, Original- IRF831
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF831
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF831
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 164 KB, Scan- IRF831
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A.
2 Pages, 127 KB, Scan- IRF831
- General Electric
- Power Transistor Data Book 1985
5 Pages, 173 KB, Scan- IRF831
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 183 KB, Scan- IRF831R
- Harris Semiconductor
- Power MOSFET Data Book 1990
10 Pages, 256 KB, Original- IRF8313PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
3 Pages, 114 KB, Original- IRF8313PBF..
- Infineon Technologies Ag
- IRF8313PBF..
10 Pages, 256 KB, Original- IRF8313TRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
1 Pages, 41 KB, Original- IRF831
- International Rectifier
- TO-220 HEXFET Power MOSFET
Product Details Search Results:
Infineon.com/IRF8313PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1476 Bytes - 11:05:25, 14 November 2024
Infineon.com/IRF8313PBF..
875 Bytes - 11:05:25, 14 November 2024
Infineon.com/IRF8313TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1487 Bytes - 11:05:25, 14 November 2024
Irf.com/IRF8313PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.35V @ 25\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.7A","Gate Charge (Qg) @ Vgs":"90nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"15.5 mOhm @ 9.7A, 10...
1970 Bytes - 11:05:25, 14 November 2024
Irf.com/IRF8313TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.35V @ 25\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.7A","Gate Charge (Qg) @ Vgs":"9nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"15.5 mOhm @ 9.7A, 10V...
2024 Bytes - 11:05:25, 14 November 2024
Semelab.co.uk/IRF831
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On R...
1297 Bytes - 11:05:25, 14 November 2024
St.com/IRF831
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Te...
1491 Bytes - 11:05:25, 14 November 2024
St.com/IRF831FI
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Tech...
1529 Bytes - 11:05:25, 14 November 2024
Various/IRF831R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.2","I(D) Abs. Max.(A) Drain Curr.":"3.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"18","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1295 Bytes - 11:05:25, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
