Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.35V @ 25\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.7A","Gate Charge (Qg) @ Vgs":"90nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"15.5 mOhm @ 9.7A, 10...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.35V @ 25\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"9.7A","Gate Charge (Qg) @ Vgs":"9nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"15.5 mOhm @ 9.7A, 10V...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On R...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Te...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Tech...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.2","I(D) Abs. Max.(A) Drain Curr.":"3.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"18","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...