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11/5/08
IRF8313PbF
HEXFET® Power MOSFET
Notes through are on page 9
SO-8
Description
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
PD - 97145
S1
G1 4
3
S2 1
G2 2
D1
D1
5
6
D28
D27
Benefits
lLow Gate Charge and Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
l20V VGS Max. Gate Rating
l100% Tested for RG
lLead-Free (Qualified to 260°C Reflow)
lRoHS Compliant (Halogen Free)
Applications
lLoad Switch
lDC/DC Conversion
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead
g
––– 42
RθJA Junction-to-Ambient
fg
––– 62.5
-55 to + 175
2.0
0.016
1.3
Max.
9.7
8.1
81
±20
30
°C/W
V
A
W
°C
VDSS RDS(on) max Qg
30V 15.5m:@VGS = 10V 6.0nC
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
IRF8313PbF
2www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
RDS
(
on
)
Static Drain-to-Source On-Resistance ––– 12.5 15.5
––– 18.6 21.6
VGS
(
th
)
Gate Threshold Voltage 1.35 1.80 2.35 V
ΔVGS
(
th
)
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 23 ––– ––– S
Q
g
Total Gate Charge ––– 6.0 9.0
Q
g
s1 Pre-Vth Gate-to-Source Charge ––– 1.5 –––
Q
g
s2 Post-Vth Gate-to-Source Charge ––– 0.9 –––
Q
g
dGate-to-Drain Charge ––– 2.2 –––
Q
g
odr Gate Charge Overdrive ––– 1.4 ––– See Figs. 17a & 17b
Qsw Switch Charge (Q
g
s2 + Q
g
d) ––– 2.9 –––
Qoss Output Charge ––– 3.8 ––– nC
R
g
Gate Resistance ––– 2.2 3.6 Ω
td
(
on
)
Turn-On Delay Time ––– 8.3 –––
trRise Time ––– 9.9 –––
td
(
off
)
Turn-Off Delay Time ––– 8.5 –––
tfFall Time ––– 4.2 –––
Ciss Input Capacitance ––– 760 –––
Coss Output Capacitance ––– 172 –––
Crss Reverse Transfer Capacitance ––– 87 –––
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energy
d
mJ
IAR Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– –––
(Body Diode)
ISM Pulsed Source Current ––– –––
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 20 30 ns
Qrr Reverse Recovery Charge ––– 10 15 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
mΩ
A3.1
82 A
–––
ID = 8.0A
VGS = 0V
VDS = 15V
nC
ns
pF
VGS = 4.5V, ID = 8.0A
e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 25μA
RG = 1.8Ω
VDS = 15V, ID = 8.0A
VDS = 24V, VGS = 0V, TJ = 125°C
μA
nA
TJ = 25°C, IF = 8.0A, VDD = 15V
di/dt = 100A/μs
e
TJ = 25°C, IS = 8.0A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 8.0A
VDS = 15V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 9.7A
e
Conditions
See Fig. 15a & 15b
Max.
46
8.0
ƒ = 1.0MHz
IRF8313PbF
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Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
≤60μs PULSE WIDTH
Tj = 25°C
2.3V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.3V
≤60μs PULSE WIDTH
Tj = 175°C
2.3V
1 2 3 4 5 6
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 175°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 9.8A
VGS = 10V
IRF8313PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
Tj = 175°C
Single Pulse
100μsec
10msec
1msec
02468101214
Qg, Total Gate Charge (nC)
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 8.0A
IRF8313PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
TA, Ambient Temperature (°C)
0
2
4
6
8
10
ID , Drain Current (A)
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
VGS(th), Gate Threshold Voltage (V)
ID = 250μA
ID = 25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W) τι (sec)
0.1396039 0.000010
0.4048955 0.000030
0.5273926 0.000020
1.2084906 0.001289
1.5779475 0.000340
7.0394610 0.009747
18.0102679 27.798341
33.5929564 0.575346
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
1
R
2
2
R
3
3
Ci
i
/
Ri
C
i
=
τ
i
/R
i
τ
a
τ
4
τ
4
R
4
R
4
τ
5
τ
5
R
5
R
5
τ
6
τ
6
R
6
6
τ
7
τ
7
R
7
7
τ
8
τ
8
R
8
8
IRF8313PbF
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Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
td(on) trtd(off) tf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 14b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 14a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
10
14
18
22
26
30
34
38
RDS(on), Drain-to -Source On Resistance (
mΩ)
TJ = 25°C
TJ = 125°C
ID = 9.8A
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 3.0A
5.0A
BOTTOM 8.0A
IRF8313PbF
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Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 17a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
Fig 17b. Gate Charge Waveform
1K
VCC
DUT
0
L
S
20K
IRF8313PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
P = DISGNATES LEAD - FREE
EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )
F7101
XXXX
INTERNATIONAL
LOGO
RECTIFIER
PART NUMBER
LOT CODE
PRODUCT (OPTIONAL)
DAT E CODE (YWW)
Y = LAS T DIGIT OF T HE YE AR
WW = WEEK
A = ASSEMBLY SITE CODE
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L IME T E RSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050] 8X 1.78
[
.070
]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
NOT E S :
1. DIMENS IONING & T OL ERANCING PE R AS ME Y14.5M-1994.
2. CONT ROL LING DIMENS ION: MILLIME T ER
3. DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHE S ].
5 DIMENS ION DOES NOT INCL UDE MOL D PROT RUS IONS .
6 DIMENS ION DOES NOT INCL UDE MOL D PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LE AD F OR S OL DERING T O
A SUBS T RAT E.
MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006].
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF8313PbF
www.irf.com 9
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF8313PbF
10 www.irf.com
Note
Form Quantity
IRF8313PbF SO-8 Tube/Bulk 95
IRF8313TRPbF SO-8 Tape and Reel 4000
Standard Pack
Orderable Part number Package Type
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/08
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http//www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
Qualification Information†
SO-8 MSL1
(per JEDEC J-STD-020D†††)
Qualification Level Consumer ††
(per JEDEC JESD47F††† guidelines)
Moisture Sensitivity Level
RoHS Compliant Yes