Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7 mOhm @ 16A, 4.5V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"600mV @ 500\u00b5A","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Packaging":"Tube","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"IRF7210PbF","Power - Max":"2.5W","Package \/ Case":"8-SOIC (0.154\", 3.90mm Wid...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd12 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16 A","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"12 V","Frequency (Max)":"Not Required MHz","Pin Count":"8","Packaging":"Tape and Reel","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"Not Requir...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"600mV @ 500\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Ta)","Gate Charge (Qg) @ Vgs":"212nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"7 mOhm @ 16A, 4.5V","Datasheets":"IRF7210PbF","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltag...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd12 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16 A","Mounting":"Surface Mount","Drain-Source On-Volt":"12 V","Pin Count":"8","Packaging":"Tape and Reel","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.007 ohm","Number of Elements":"1"}...