PD- 91844B IRF7210 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.007 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Junction and Storage Temperature Range Max. Units -12 16 12 100 2.5 1.6 0.02 12 16 -55 to + 150 V W/C V V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 10/19/04 IRF7210 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS V(BR)DSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 -12 --- --- -0.6 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- 0.011 .005 .007 --- --- --- --- --- --- --- 212 27 52 50 3.0 6.5 30 17179 9455 8986 Max. Units Conditions --- V VGS = 0V, ID = -5.0mA --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA .007 VGS = -4.5V, ID = -16A .010 VGS = -2.5V, ID = -12A --- V VDS = VGS, ID = -500A --- S VDS = -10V, ID = -16A -10 VDS = -12V, VGS = 0V -1.0 VDS = -9.6V, VGS = 0V A -100 VDS = -12V, VGS = 0V, TJ = 70C -100 nA VGS = -12V 100 VGS = 12V --- ID = -10A --- nC VDS = -10V --- VGS = -5.0V --- ns VDD = -10V --- ID = -10A s --- RD = 1.0 --- RG = 6.2 --- VGS = 0V --- pF VDS = -10V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -100 --- --- --- --- 165 296 -1.2 247 444 A V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 85A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7210 20 VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V 12 8 4 -0.8V 0 0 2 4 6 8 12 4 -0.8V A 0 TJ = 25C 100 80 TJ = 150C 40 20 V DS = -10V 300s PULSE WIDTH 6.0 A 8.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 120 4.0 4 6 8 ID = -16A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -V GS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 10 Fig 2. Typical Output Characteristics 2.0 2.0 2 -V DS, Drain-to-Source Voltage (V) 140 0.0 A 0 10 Fig 1. Typical Output Characteristics 0 300s PULSE WIDTH TJ = 150C 8 -VDS , Drain-to-Source Voltage (V) 60 VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V TOP -I , Drain-to-Source Current (A) D -I , Drain-to-Source Current (A) D 16 16 300s PULSE WIDTH TJ = 25C TOP 3 IRF7210 10 V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 24000 20000 Ciss 16000 12000 Coss Crss 8000 0 2 4 6 8 10 12 I D = -10A VDS = -12V 8 6 4 2 0 A 0 50 -V DS , Drain-to-Source Voltage (V) 200 250 300 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage TJ = 25C 100 10 VGS = 0V 1 2.0 4.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 150C 0.0 RDS(on) , Drain-to-Source On Resistance ( ) -IID , Drain Current (A) 1000 1000 -I SD , Reverse Drain Current (A) 150 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 6.0 8.0 -V SD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100 A 10.0 100us 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area. www.irf.com A IRF7210 Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7210 SO-8 Package Details DIM D -B- 5 8 E -A- 1 7 2 5 6 3 e 6X 5 H 0.25 (.010) 4 M A M e1 K x 45 A -CB 8X 0.25 (.010) A1 0.10 (.004) L 8X 6 C 8X M C A S B S MILLIMETERS MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 1. 2. 3. 4. INCHES MIN 0.72 (.028 ) 8X DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 6 ;;;; ) '$7(&2'(<:: 3 ',6*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 www.irf.com IRF7210 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 www.irf.com 7